scholarly journals "Structural Study of Porous Si with Different Crystal Orientation Fabricated Using Two-Step Alternating Current Photo-Electrochemical Etching Technique "

2021 ◽  
Vol 19 (OCT2021) ◽  
pp. 173-177
Author(s):  
Fatimah Zulkifli ◽  
Rosfariza Radzali ◽  
Alhan Farhanah Abd Rahim ◽  
Ainorkhilah Mahmood ◽  
Aslina Abu Bakar
Keyword(s):  
Structural Study ◽  
Crystal Orientation ◽  
Electrochemical Etching ◽  
Alternating Current ◽  
Porous Si ◽  
Etching Technique

Fabrication of Porous Si Particles by Electrochemical Etching

2013 ◽  
Vol 2 (12) ◽  
pp. P117-P119 ◽  
Author(s):  
T. Yanagishita ◽  
M. Imaizumi ◽  
K. Nishio ◽  
H. Masuda
Keyword(s):  
Electrochemical Etching ◽  
Porous Si

Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps

2008 ◽  
Vol 600-603 ◽  
pp. 871-874 ◽  
Author(s):  
J.H. Leach ◽  
Hadis Morkoç ◽  
Yue Ke ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke
Keyword(s):  
Nanoimprint Lithography ◽  
Elevated Temperatures ◽  
Electrochemical Etching ◽  
Nanowire Growth ◽  
Porous Si ◽  
Vapor Liquid Solid ◽  
Superior Mechanical Properties ◽  
20 Nm ◽  
Porous Sic ◽  
Solid Type

Columnar porous Si-face 6H-SiC substrates were prepared by a photo-electrochemical etching method and applied as nanoimprint lithography (NIL) stamps. The diameter of the pores in the porous region was about 20 nm and the center-to-center separation between pores was about 60 nm. The columnar porous SiC substrates were subjected to a vapor phase silanization treatment whereby a monolayer of perfluorooctyltrichlorosilane (FOTS) was deposited in order to keep the stamps from sticking to the substrates during the imprint step. Subsequently, the porous SiC stamps were used to imprint polymethylmethacrylate (PMMA) at elevated temperatures and pressures. The imprinted PMMA could then be used to transfer the nanopattern on the columnar porous SiC to other substrates for various purposes; e.g. templates for GaN regrowth, catalysts for nanowire growth by vapor-liquid-solid type methods (VLS), etc. SiC is not typically used for NIL stamps since etch processing of SiC is less mature than that of Si. However, as demonstrated here, there is no reason why SiC cannot be used as a material for NIL stamps. The superior mechanical properties to Si make the use of SiC alluring as a master template for NIL processing.

Visible Photoluminescence From Rapid-Thermal-Oxidized Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Y. Kanemitsu ◽  
T. Matsumoto ◽  
T. Futagi ◽  
H. Mimura
Keyword(s):  
Electronic Structure ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Electronic Structure Calculations ◽  
Porous Si ◽  
Silicon Oxides ◽  
Visible Photoluminescence ◽  
Oxidized Porous Silicon ◽  
Structure Calculations ◽  
Silicon Oxygen

AbstractWe have studied the origin of the visible photoluminescence (PL) from oxidized porous Si. The hydrogen–passivated surface of porous Si prepared by electrochemical etching is converted to stable silicon oxides by rapid–thermal–oxidization processes. At low oxidation temperature (Tox), the PL spectrum with a peak near 700 nm is observed. At high Tox above 800 °C, a strong blue PL is observed near 400 nm. We discuss the origin of blue and red PL by employing the results of ab initio electronic structure calculations of silicon–oxygen compounds.

Sign in / Sign up

Export Citation Format

Share Document