Pressure Dependence of Aluminum Doping in SiC Vapor Phase Epitaxy

2004 ◽  
Vol 815 ◽  
Author(s):  
Adolf Schöner ◽  
Malin Gustafsson
Keyword(s):  
Vapor Phase ◽  
Doping Concentration ◽  
Profile Analysis ◽  
Schottky Contacts ◽  
Doping Profile ◽  
Aluminum Concentration ◽  
Analysis Method ◽  
Homoepitaxial Growth ◽  
Capacitance Voltage ◽  
Reactor Pressure

AbstractThe dependence of the aluminum incorporation on the total pressure in a hot wall vapor phase reactor for SiC homoepitaxial growth has been investigated. It was found that in the doping concentration range from 1·1017 cm−3 to 1·1019 cm−3 the incorporated aluminum concentration varies by the factor 3 to 4, when the reactor pressure is changed from 150 mbar to 250 mbar. Lower reactor pressure gives lower aluminum concentration. Periodically changing reactor pressure results in aluminum concentration periodically changing with depth in the epilayer. All results were measured electrically by capacitance-voltage measurements on nickel Schottky contacts. Additional experiments have been performed for n-type nitrogen doped SiC epilayers for comparison. The nitrogen doping concentration was found to be independent of the reactor pressure within the accuracy of the applied C-V measurements and the doping profile analysis method.

Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements

1995 ◽  
Vol 142 (2) ◽  
pp. 576-580 ◽  
Author(s):  
E. Peiner ◽  
A. Schlachetzki ◽  
D. Krüger
Keyword(s):  
Profile Analysis ◽  
Doping Profile ◽  
Electrochemical Capacitance ◽  
Capacitance Voltage

The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

2009 ◽  
Vol 517 (6) ◽  
pp. 2088-2091 ◽  
Author(s):  
X.C. Cao ◽  
D.L. Xu ◽  
H.M. Guo ◽  
C.J. Liu ◽  
Z.J. Yin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Reactor Pressure

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

The Synthesis of YBa3Cu4Ox Superconductor and Comparison with YBa2Cu3Ox

2014 ◽  
Vol 979 ◽  
pp. 220-223
Author(s):  
Piyamas Chainok ◽  
Supphadate Sujinnapram ◽  
Tunyanop Nilkamjon ◽  
Sermsuk Ratreng ◽  
Kiattipong Somsri ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Solid State ◽  
Solid State Reaction ◽  
Profile Analysis ◽  
Analysis Method ◽  
Orthorhombic Structure ◽  
Resistivity Measurements ◽  
Full Profile ◽  
Sem Micrograph

In this research, the Y123 (YBa2Cu3Ox) and Y134 (YBa3Cu4Ox) superconductors were synthesized by solid state reaction and melt process, respectively. The crystal structure of all the samples were then determined using the Rietveld full-profile analysis method to indicate orthorhombic structure. The resistivity measurements showing Tc onset of Y123 lower than Y134 for solid state reaction but higher than Y134 melt process. However, the critical temperature off-set of Y134 has lower than of Y123. The SEM and EDX show that all samples were inhomogeneous. The SEM micrograph for solid state reaction Y123 has many pores between the grain and the grain size clearly demonstrated and bigger than Y134. It was seen that these pores are party eliminated in melt process samples. FTIR spectra detected the trace of carbonate residue in all samples.

Combustion Synthesis of Si3N4 from Si/NH4Cl at Low Nitrogen Pressure

2008 ◽  
Vol 368-372 ◽  
pp. 1767-1770 ◽  
Author(s):  
Yi Xiang Chen ◽  
Jiang Tao Li ◽  
Zhi Ming Lin ◽  
Guang Hua Liu ◽  
S.L. Yang ◽  
...  
Keyword(s):  
Combustion Synthesis ◽  
Combustion Temperature ◽  
Profile Analysis ◽  
Combustion Velocity ◽  
Nitrogen Pressure ◽  
Analysis Method ◽  
Α Phase ◽  
Steady Combustion ◽  
Combustion Wave Velocity ◽  
Low Nitrogen

Combustion synthesis (CS) of Si3N4 was accomplished by using as-milled Si/NH4Cl as reactants at low nitrogen pressure. The additive of NH4Cl decreased the combustion temperature and promoted the Si nitridation. Full nitridation of Si was achieved by burning Si in pressurized nitrogen with 10 ~ 25 wt. % NH4Cl as additives while no Si3N4 diluent added. The maximum combustion temperature (Tc), the combustion velocity (u) together with the α-Si3N4 content and mean particle size (d50) of the powder products were found to be great dependent on the NH4Cl content added in the reactants. Fine Si3N4 powder products with α-phase content up to 85 wt. % were obtained via steady combustion mode. A mathematical approach named combustion wave velocity methods for the analysis of temperature profiles in CS was proposed and the reaction kinetics was discussed. The apparent activation energy calculated according to the temperature profile analysis method is 29.7 kJ/mol, which agrees well with the corresponding low temperature nitriding combustion of Si.

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

2014 ◽  
Vol 8 (1) ◽  
pp. 015503 ◽  
Author(s):  
Hisashi Murakami ◽  
Kazushiro Nomura ◽  
Ken Goto ◽  
Kohei Sasaki ◽  
Katsuaki Kawara ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Homoepitaxial Growth

scholarly journals Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями

2019 ◽  
Vol 45 (20) ◽  
pp. 51
Author(s):  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Numerical Model ◽  
Leakage Current ◽  
Molecular Beam ◽  
Voltage Characteristic ◽  
Doping Profile ◽  
Published Data ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Inp Substrate ◽  
Capacitance Voltage

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

Surface Profile Analysis for Conformable Interfaces

2003 ◽  
Vol 125 (3) ◽  
pp. 624-627 ◽  
Author(s):  
Mark C. Malburg
Keyword(s):  
Contact Area ◽  
Load Distribution ◽  
Profile Analysis ◽  
Surface Profile ◽  
Solid Surfaces ◽  
Analysis Method ◽  
Uniform Load ◽  
Morphological Filtering ◽  
Novel Method

This paper presents a novel method for the analysis of solid surfaces in contact with a conformable component. These applications are common in many engine and hydraulic applications, wherein conformable seals, gaskets, bushings, etc. are employed to prevent unwanted flow across an interface or provide a uniform load distribution. The proposed analysis method employs a combination of meanline (m-system) filtering and envelope (e-system) or morphological filtering. Through this analysis, a simulation of contact area and the associated voids or gaps can be assessed.

Sign in / Sign up

Export Citation Format

Share Document