scholarly journals X-ray photoelectron spectroscopy (XPS) study of Heusler alloy (Co2FeAl) interfaced with semiconductor (n-Si) structure

2019 ◽  
Vol 37 (1) ◽  
pp. 116-121
Author(s):  
Arvind Kumar ◽  
P.C. Srivastava
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Photoelectron Spectroscopy ◽  
Heusler Alloy ◽  
Crucial Role ◽  
Chemical State ◽  
X Ray ◽  
Si Substrates ◽  
Magnetic Heterostructures ◽  
Xps Study

AbstractLayered magnetic heterostructures are very promising candidates in spintronics in which the influences of interfaces, surfaces and defects play a crucial role. X-ray photoelectron spectroscopy (XPS) study has been performed for studying in detail the chemical state and electronic structure of Co2FeAl (CFA) Heusler alloy interfaced with Si substrates. XPS survey scan spectra have clearly shown the presence of Fe, Co and Al signal along with the signal due to Si. The presence of Co, Fe and Al signal confirms the formation of CFA alloy phase. Our XPS results support our previous study [1] on CFA/Si structure in determining the magnetic and transport properties across the interface.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

A study of the FeX (X=Si, Ge) system electronic structure by X-ray photoelectron spectroscopy

2000 ◽  
Vol 447 (1-3) ◽  
pp. 112-116 ◽  
Author(s):  
I.N. Shabanova ◽  
V.I. Kormilets ◽  
L.D. Zagrebin ◽  
N.S. Terebova
Keyword(s):  
Electronic Structure ◽  
Photoelectron Spectroscopy ◽  
X Ray

scholarly journals Electronic structure of β-Ta films from X-ray photoelectron spectroscopy and first-principles calculations

2019 ◽  
Vol 470 ◽  
pp. 607-612 ◽  
Author(s):  
Martin Magnuson ◽  
Grzegorz Greczynski ◽  
Fredrik Eriksson ◽  
Lars Hultman ◽  
Hans Högberg
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Photoelectron Spectroscopy ◽  
First Principles Calculations ◽  
X Ray

Electronic structure of Ni and Pd alloys. I. X-ray photoelectron spectroscopy of the valence bands

1983 ◽  
Vol 27 (4) ◽  
pp. 2145-2178 ◽  
Author(s):  
John C. Fuggle ◽  
F. Ulrich Hillebrecht ◽  
R. Zeller ◽  
Zygmunt Zołnierek ◽  
Peter A. Bennett ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Valence Bands

Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties

2013 ◽  
Vol 534 ◽  
pp. 141-145 ◽  
Author(s):  
Yuto Hakamada ◽  
Shunji Ozaki
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Monoxide ◽  
Vapor Transport ◽  
X Ray ◽  
Si Substrates ◽  
Vls Growth ◽  
Transport Method ◽  
Vapor Transport Method ◽  
Scanning Electron

SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on the radius of nanowires indicates that the SiOx nanowires grow through the vaporliquidsolid (VLS) growth mechanism. The properties of the nanowires are characterized using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL).

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