A Study on Surface Formation Mechanism by Molecular Beam Epitaxy. (2nd Report). An Effect of Substrate Orientation upon Si-Si Homo-Epitaxial Growth Mechanism.
2001 ◽
Vol 67
(2)
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pp. 316-321
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2000 ◽
Vol 66
(5)
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pp. 735-741
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2001 ◽
Vol 67
(8)
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pp. 1304-1309
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2011 ◽
Vol 29
(1)
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pp. 01A801
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1992 ◽
Vol 117
(1-4)
◽
pp. 139-143
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1999 ◽
Vol 14
(3)
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pp. 257-265
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Keyword(s):
1998 ◽
Vol 16
(3)
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pp. 1339
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1986 ◽
Vol 4
(4)
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pp. 878
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1997 ◽
Vol 175-176
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pp. 587-592
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