scholarly journals Depth Profile Analysis of Structures in ArF Resists by 172nm VUV Curing and Dry Etching Process Using .MU.-FTIR with Gradient Shaving Preparation

2004 ◽  
Vol 17 (4) ◽  
pp. 535-540 ◽  
Author(s):  
Haruki Okumura ◽  
Kazuhiro Takeda ◽  
Naoto Nagai
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Dry Etching ◽  
Etching Process ◽  
Depth Profile Analysis

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

Formation mechanism of plasmonic silver nanohexagonal particles made by galvanic displacement reaction

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31454-31461 ◽  
Author(s):  
Y. S. Yamamoto ◽  
Y. Fujime ◽  
N. Takahashi ◽  
S. Nakanishi ◽  
T. Itoh
Keyword(s):  
Formation Mechanism ◽  
Depth Profile ◽  
Profile Analysis ◽  
Displacement Reaction ◽  
Galvanic Displacement ◽  
Depth Profile Analysis ◽  
Galvanic Displacement Reaction ◽  
Xps Depth Profile

Multi-element XPS depth profile analysis made clear that Ag nanoscale hexagonal columns formed by newly-discovered galvanic displacement reaction are covered with Cu compounds which prevent Ag columns from fusion, resulting in stable hotspots.

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