Fibre-based temperature measurement (DTS) in coil-wound heat exchangers for LNG production

Uncertainty analysis of wireless temperature measurement (WTM) in borehole heat exchangers

Geothermics ◽

10.1016/j.geothermics.2020.102019 ◽

2021 ◽

Vol 90 ◽

pp. 102019

Author(s):

Simon Schüppler ◽

Roman Zorn ◽

Hagen Steger ◽

Philipp Blum

Keyword(s):

Uncertainty Analysis ◽

Temperature Measurement ◽

Heat Exchangers ◽

Borehole Heat Exchangers

Download Full-text

Embedded thermocouple wall temperature measurement technique for scraped surface heat exchangers

Applied Thermal Engineering ◽

10.1016/j.applthermaleng.2016.12.039 ◽

2017 ◽

Vol 114 ◽

pp. 793-801 ◽

Cited By ~ 7

Author(s):

D.S. Martínez ◽

F. Illán ◽

J.P. Solano ◽

A. Viedma

Keyword(s):

Temperature Measurement ◽

Measurement Technique ◽

Wall Temperature ◽

Heat Exchangers ◽

Surface Heat ◽

Temperature Measurement Technique

Download Full-text

Study of Heat Transfer in Microsystems by Infrared Technique

ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer, Parts A and B ◽

10.1115/mnht2008-52326 ◽

2008 ◽

Author(s):

G. Hetsroni ◽

A. Mosyak ◽

R. Rozenblit

Keyword(s):

Heat Transfer ◽

Porous Media ◽

Image Analysis ◽

Temperature Measurement ◽

Direct Measurement ◽

Heat Exchangers ◽

High Heat ◽

Heat Fluxes ◽

Liquid Temperature ◽

Advantages And Disadvantages

The problem of dissipating high heat fluxes has received much attention due to its importance in such applications as cooling of electronic equipment, micro heat exchangers and many others. The most effective way of cooling is pumping liquid inside these devices through microchannels or porous media. Advantages and disadvantages using the Infrared Technique for the study of the heat transfer in microsystems are analyzed. The generalized model for analysis using IR technique for the temperature measurement in microdevices is suggested. The model is illustrated by various examples of heat transfer determination using image analysis as the heater temperature as well direct measurement of the liquid temperature.

Download Full-text

Determination of creep mechanisms in various silicon carbides via TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143973 ◽

1986 ◽

Vol 44 ◽

pp. 484-487

Author(s):

C. H. Carter ◽

J. E. Lane ◽

J. Bentley ◽

R. F. Davis

Keyword(s):

Heat Exchangers ◽

Sintered Material ◽

Polycrystalline Material ◽

Chemical Vapor ◽

Graphite Substrate ◽

Second Phase ◽

Reaction Bonding ◽

Creep Mechanisms ◽

Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

Download Full-text