Three Dimensional Simulation of Electric Field and MHD Power Generation During Re-Entry

Author(s):  
Tian Wan ◽  
Ryuta Suzuki ◽  
Graham Candler ◽  
Sergey Macheret ◽  
Mikhail Shneider
AIAA Journal ◽  
2009 ◽  
Vol 47 (6) ◽  
pp. 1327-1336 ◽  
Author(s):  
Tian Wan ◽  
Graham V. Candler ◽  
Sergey O. Macheret ◽  
Mikhail N. Shneider

2008 ◽  
Vol 128 (2) ◽  
pp. 459-466 ◽  
Author(s):  
Yoshitaka Inui ◽  
Tadashi Tanaka ◽  
Tomoyoshi Kanno

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


2009 ◽  
Vol 19 (1) ◽  
pp. 75-90 ◽  
Author(s):  
Hong-Bing Xiong ◽  
Jian-Zhong Lin ◽  
Ze-Fei Zhu

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