scholarly journals INVESTIGATION OF BARRIER LAYERS FOR THE FORMATION OF COPPER VIAS

Author(s):  
Sergey Gorokhov
Keyword(s):  

The paper investigates possible barrier layers (Ti/TiN/Ti, Ti/TiN/Ta, TaN/Ta) for forming vias to transistor structures made of copper.

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.


Author(s):  
W. -P. Breugem ◽  
P. Chang ◽  
C. J. Jang ◽  
J. Mignot ◽  
W. Hazeleger

Author(s):  
Vaibhav Gupta ◽  
Mark L. Adams ◽  
John A. Sellers ◽  
Noah Niedzwiecki ◽  
Nick Rush ◽  
...  

2007 ◽  
Vol 84 (11) ◽  
pp. 2669-2674 ◽  
Author(s):  
C. Zhao ◽  
Zs. Tőkei ◽  
A. Haider ◽  
S. Demuynck

Author(s):  
Elena O. Filatova ◽  
Sergei S. Sakhonenkov ◽  
Aidar U. Gaisin ◽  
Aleksei S. Konashuk ◽  
Ratibor G. Chumakov ◽  
...  

In the present study, the formation of intermediate compounds in the Mo/Si multilayer was realized by the introduction of barrier layers at the interfaces.


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