scholarly journals Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application

2019 ◽  
Vol 14 (1) ◽  
pp. 1-5
Author(s):  
Victor De Rezende Cunha ◽  
Daniel Neves Micha ◽  
Rudy Massami Sakamoto Kawabata ◽  
Luciana Dornelas Pinto ◽  
Mauricio Pamplona Pires ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Triple Junction ◽  
Short Circuit ◽  
Active Material ◽  
Multiple Quantum Well ◽  
Electrical Current ◽  
Multiple Quantum ◽  
Junction Solar Cell

Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlargement of the electrical current density of an InGaP pn junction to achieve the proper current matching in triple junction solar cell for spatial applications. The optimized structure has been grown in a GaAs substrate and characterized as a single junction solar cell. Although the measured short circuit current density and conversion efficiency are still well below the theoretically predicted values, processing improvement should lead to adequate cell performance.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Current Density ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

Enhanced Light Absorption in Concentrated GaInP/GaAs/Ge Solar Cells Using a Secondary Optical Element with Subwavelength Structures

2018 ◽  
Vol 10 (3) ◽  
pp. 413-416 ◽  
Author(s):  
Ho-Jung Jeong ◽  
Dae-Seon Kim ◽  
Sung-Bin Kim ◽  
Chan-Kyu Park ◽  
Ju-Hyung Yun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Light Absorption ◽  
Triple Junction ◽  
Power Conversion ◽  
Optical Element ◽  
Subwavelength Structures ◽  
Subwavelength Structure ◽  
Junction Solar Cell ◽  
Average Transmittance

A secondary optical element (SOE) with a subwavelength structure (SWS) was developed and incorporated on a GaInP/GaAs/Ge triple-junction solar cell. The nanoscale SWS was realized by dry etching using a silver (Ag) nanomask. The fabricated SWS SOE was mounted on a triple-junction solar cell. The SWS SOE exhibited improved transmittance in the broadband wavelength range from 350 to 1800 nm. Compared with SOE without SWS, the average transmittance was improved by 2.43%. The power-conversion efficiency (PCE) of the CPV module with the SWS SOE was 28.4%, whereas the PCE of the module without SWS was 27.8%. The enhanced efficiency of the CPV module is ascribed to improved current density due to reduced reflection losses at the surface of the SWS SOE.

Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

2009 ◽  
Vol 94 (22) ◽  
pp. 223504 ◽  
Author(s):  
Wolfgang Guter ◽  
Jan Schöne ◽  
Simon P. Philipps ◽  
Marc Steiner ◽  
Gerald Siefer ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Junction Solar Cell
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