scholarly journals Eucalyptus Leaves as Potential Indicators of Gold Mine in Indonesia

2022 ◽  
Vol 8 (1) ◽  
pp. 45-50
Author(s):  
Dian Artha Kusumaningtyas ◽  
Hanif Khoirudin ◽  
Muamila Tami ◽  
Mila Utami Sari ◽  
Arif Nirsatmanto ◽  
...  

Eucalyptus is a plant that is able to absorb gold (Au) particles from the soil and store them in the leaves. Eucalyptus roots have the ability to penetrate the soil of the calcrete zone, which is rich in the mineral calcium (Ca). Calcium is a chemical element with the symbol Ca and atomic number 20. As an alkaline earth metal, calcium is a reactive metal that forms a dark oxide-nitride layer when exposed to air. and contains Au particles as impurities, making this plant a potential natural indicator (biogeochemical) of potential Au metal mining. The Au content in eucalyptus leaves can be determined by using the XRF (X-Ray Fluorescence) instrumentation material analysis method for qualitative analysis and AAS (Atomic Absorption Spectroscopy) for quantitative results. The form of XRF characterization of the intensity versus energy spectrum of certain elements from the XRF analysis results obtained is a spectrum with a peak power of 9.731 keV which indicates the presence of Au metal in the sample. The results obtained qualitatively are the Au metal content in the eucalyptus leaf sample of (9.0 ± 0.5) ppm. However, the Au metal content in each leaf sample was different. This provides information that Eucalyptus from different plants has the potential to be a biogeochemical indicator of potential Au metal mining in Indonesia

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.


2009 ◽  
Vol 45 (4) ◽  
pp. 1282-1292 ◽  
Author(s):  
Mercé Arasa ◽  
Xavier Ramis ◽  
Josep Maria Salla ◽  
Francesc Ferrando ◽  
Angels Serra ◽  
...  

1998 ◽  
Vol 358 (2) ◽  
pp. 177-183 ◽  
Author(s):  
M.J Martı́n ◽  
F Pablos ◽  
A.G González
Keyword(s):  

2008 ◽  
Vol 33 (11) ◽  
pp. 2660-2667 ◽  
Author(s):  
F ROSALBINO ◽  
D MACCIO ◽  
E ANGELINI ◽  
A SACCONE ◽  
S DELFINO

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