scholarly journals Estimating In-Situ Thermal Conductivity from Log Data

Author(s):  
H.W. Villinger ◽  
M.G. Langseth ◽  
H.M. Gröschel-Becker ◽  
A.T. Fisher
2019 ◽  
Vol 71 (1) ◽  
Author(s):  
Suguru Yabe ◽  
Rina Fukuchi ◽  
Yohei Hamada ◽  
Gaku Kimura

Abstract The shallow accretionary prism of the Nankai Trough is a location where both large interplate earthquakes and slow earthquakes occur. Since the physical properties of sedimentary materials are important topics for understanding the structure of the prism, numerous ocean drilling expeditions have been conducted in that region to obtain logging data and core samples. Although the physical properties of the obtained samples are normally measured onboard immediately after coring, estimations of in situ physical properties are difficult because of differences in laboratory and in situ physical conditions. Herein, we propose a new method for estimating in situ porosity from downhole electrical resistivity log data that evaluates in situ porosity and thermal structure simultaneously using correlations between the porosity and resistivity, and between the porosity and thermal conductivity that were established based on laboratory measurements. When constructing physical property correlations, X-ray computed tomography data play an important role in estimating the porosity of samples from which resistivity or thermal conductivity were measured. To validate our method, we compared the estimation with density log data collected at Site C0002 and found that the estimated in situ porosity shows good agreement with the in situ porosity converted from density log data. A comparison with porosity measured onboard for core and cutting samples showed that they are consistent with each other. With this new method, continuous distributions of in situ porosity and thermal structure can be estimated simultaneously based on resistivity log data and heat flow, which are basic quantities acquired during ocean drilling science expeditions.


AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065015
Author(s):  
Fu Yi ◽  
Xupeng Qi ◽  
Xuexin Zheng ◽  
Huize Yu ◽  
Wenming Bai ◽  
...  

Polymer ◽  
2021 ◽  
pp. 123726
Author(s):  
Hajime Kishi ◽  
Takashi Saruwatari ◽  
Takemasa Mototsuka ◽  
Sanae Tanaka ◽  
Takeshi Kakibe ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Ghadami ◽  
E. Taheri-Nassaj ◽  
H. R. Baharvandi ◽  
F. Ghadami

AbstractHfB2, Si, and activated carbon powders were selected to fabricate 0–30 vol% SiC reinforced HfB2-based composite. Pressureless sintering process was performed at 2050 °C for 4 h under a vacuum atmosphere. Microstructural studies revealed that in situ SiC reinforcement was formed and distributed in the composite according to the following reaction: Si + C = SiC. A maximum relative density of 98% was measured for the 20 vol% SiC containing HfB2 composite. Mechanical investigations showed that the hardness and the fracture toughness of these composites were increased and reached up to 21.2 GPa for HfB2-30 vol% SiC and 4.9 MPa.m1/2 for HfB2-20 vol% SiC, respectively. Results showed that alpha-SiC reinforcements were created jagged, irregular, and elongated in shape which were in situ formed between HfB2 grains and filled the porosities. Formation of alpha-SiC contributed to improving the relative density and mechanical properties of the composite samples. By increasing SiC content, an enhanced trend of thermal conductivity was observed as well as a reduced trend for electrical conductivity.


Author(s):  
Dezhi Zhang ◽  
Yingru Li ◽  
Zhenliang Yang ◽  
Bingqing Li ◽  
Zhiyi Wang ◽  
...  
Keyword(s):  

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


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