scholarly journals Effect of Hydrostatic Pressure and Temperature on Quantum Confinement of AlGaN/GaN HEMTs

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Rajab Yahyazadeh ◽  
◽  
Zahra Hashempour ◽  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Effective Mass ◽  
Electron Density ◽  
Quantum Confinement ◽  
Wave Functions ◽  
Gan Hemts ◽  
Increasing Temperature ◽  
Pressure And Temperature Effects ◽  
Good Agreement

In this paper, an analytical model for quantum confinement electron density in two-dimensional quantum well, has been investigated. In order to obtain the exact AlGaN/GaN HEMTs parameters such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects are taken into account. It has been found that the electron density decreases with increasing temperature and increases with increasing hydrostatic pressure. With increasing hydrostatic pressure, the effective mass decreases and the quantum confinement electrons are increased in the quantum well. Also with increasing hydrostatic pressure, the height of wave functions increase and decreases electron wave functions to penetrate the quantum barrier but increasing the temperature behaves the opposite of increasing the pressure. However, with increasing temperature, the effective mass is increased and the quantum confinement electrons are reduced. The calculated results for electron density are in good agreement with existing experimental data.

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

INFLUENCE OF PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF HYDROGENIC DONOR IN SOME LOW-LYING EXCITED STATES IN A QUANTUM WELL

2007 ◽  
Vol 06 (01) ◽  
pp. 37-40 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Effective Mass ◽  
Excited States ◽  
Diamagnetic Susceptibility ◽  
Mass Approximation ◽  
X Band ◽  
Hydrogenic Donor ◽  
Band Mixing ◽  
Band Crossing

The influence of Γ–X band crossing due to the applied hydrostatic pressure on the diamagnetic susceptibility (χ dia ) of a donor in low-lying excited states like 2s, 2p0, 2p± in a GaAs / Al x Ga 1-x As Quantum Well has been investigated in the effective mass approximation by considering the nonparabolicity of the conduction band. We notice that the effect of Γ–X band mixing is significant on χ dia of a donor lying in excited states. Moreover, the effect of non-parabolicity on χ dia is also predominant for lower well width region. The results are presented and discussed.

THE EFFECTS OF TEMPERATURE AND HYDROSTATIC PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF A DONOR IN A QUANTUM WELL

2011 ◽  
Vol 18 (05) ◽  
pp. 147-152 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Diamagnetic Susceptibility ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Different Temperatures ◽  
Effects Of Temperature

Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the diamagnetic susceptibility and the impurity binding on temperature and hydrostatic pressure.

EXCITONS IN A NARROW PARABOLIC QUANTUM WELL UNDER EXTERNAL FIELDS

2003 ◽  
Vol 17 (24) ◽  
pp. 1253-1264 ◽  
Author(s):  
ECATERINA C. NICULESCU ◽  
LILIANA BURILEANU
Keyword(s):  
Spatial Distribution ◽  
Magnetic Fields ◽  
Electric Field ◽  
Quantum Well ◽  
Effective Mass ◽  
Conduction Band ◽  
Quantum Confinement ◽  
Mass Approximation ◽  
Low Field ◽  
Electric And Magnetic Fields

The effects of electric and magnetic fields on the ground (1S-like) and excited (2S-like) states of an exciton in a narrow GaAs/Al x Ga 1-x As parabolic quantum well are studied. The effective-mass approximation within a perturbation-variational scheme is adopted. We find that the hole-mass anisotropy and nonparabolicity of the conduction band significantly modify the electron properties in such structures in which the quantum confinement plays a fundamental role. The effect of the electric field on the spatial distribution of the electron and hole is also investigated. In the low field regime, the diamagnetic shift of the exciton energies is calculated.

scholarly journals Effects of Polaron and Quantum Confinement on the Nonlinear Optical Properties in a GaAs/Ga1-xAlxAs Quantum Well Wire

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
L. Caroline Sugirtham ◽  
A. John Peter ◽  
Chang Woo Lee
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Photoionization Cross Section ◽  
Third Order ◽  
Third Harmonic ◽  
Quantum Well Wire ◽  
Geometrical Effect ◽  
Theoretical Results ◽  
Order Susceptibility ◽  
Good Agreement

The binding energy of a polaron confined in a GaAs/Ga1-xAlxAs quantum well wire is calculated within the framework of the variational technique and Lee-Low Pines approach. The polaron-induced photoionization cross section as a function of normalized photon energy for a on-centre donor impurity in the quantum wire is investigated. The oscillator strength with the geometrical effect is studied taking into account the polaron effects in a GaAs/Ga0.8Al0.2As quantum well wire. The effect of polaron on the third-order susceptibility of third harmonic generation is studied. Our theoretical results are shown to be in good agreement with previous investigations.

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