THE EFFECTS OF TEMPERATURE AND HYDROSTATIC PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF A DONOR IN A QUANTUM WELL

2011 ◽  
Vol 18 (05) ◽  
pp. 147-152 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Diamagnetic Susceptibility ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Different Temperatures ◽  
Effects Of Temperature

Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the diamagnetic susceptibility and the impurity binding on temperature and hydrostatic pressure.

INFLUENCE OF PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF HYDROGENIC DONOR IN SOME LOW-LYING EXCITED STATES IN A QUANTUM WELL

2007 ◽  
Vol 06 (01) ◽  
pp. 37-40 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Effective Mass ◽  
Excited States ◽  
Diamagnetic Susceptibility ◽  
Mass Approximation ◽  
X Band ◽  
Hydrogenic Donor ◽  
Band Mixing ◽  
Band Crossing

The influence of Γ–X band crossing due to the applied hydrostatic pressure on the diamagnetic susceptibility (χ dia ) of a donor in low-lying excited states like 2s, 2p0, 2p± in a GaAs / Al x Ga 1-x As Quantum Well has been investigated in the effective mass approximation by considering the nonparabolicity of the conduction band. We notice that the effect of Γ–X band mixing is significant on χ dia of a donor lying in excited states. Moreover, the effect of non-parabolicity on χ dia is also predominant for lower well width region. The results are presented and discussed.

Simultaneous effects of pressure and temperature on excitons in Pöschl–Teller quantum well

2017 ◽  
Vol 31 (08) ◽  
pp. 1750050 ◽  
Author(s):  
A. Anitha ◽  
M. Arulmozhi
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Light Hole ◽  
Binding Energies ◽  
Exciton Binding Energy ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Asymmetric Configuration

Binding energies of the heavy hole and light hole exciton in a quantum well with Pöschl–Teller (PT) potential composed of GaAs have been studied variationally within effective mass approximation. The effects of pressure and temperature on exciton binding energy are analyzed individually and also simultaneously for symmetric and asymmetric configuration of the well. The results show that exciton binding energy (i) decreases as the well width increases, (ii) increases with pressure and (iii) decreases with temperature. Simultaneous effects of these perturbations lead to more binding of the exciton. The results are compared with the existing literature.

MAGNETIC STUDIES OF METAL–INSULATOR TRANSITION IN A QUANTUM WELL SYSTEM

2008 ◽  
Vol 07 (04n05) ◽  
pp. 207-213 ◽  
Author(s):  
A. JOHN PETER ◽  
L. CAROLINE SUGIRTHAM
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Effective Mass ◽  
Diamagnetic Susceptibility ◽  
Insulator Transition ◽  
Magnetic Studies ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Intense Magnetic Field ◽  
Mass Approximation

Metal–insulator transition in doped semiconductors is investigated in the presence of intense magnetic fields. A variational procedure within the effective mass approximation is employed using the Thomas–Fermi screening function and the exact quasi-Q2D Lindhard dielectric function. The Hubbard model results are justified using an effective mass that depends on interimpurity separation. The nonparabolicity of the subband is included using an energy-dependent effective mass. Though an increase of ionization energy with a magnetic field is observed for isolated donor models, the metallization occurs with an intense magnetic field at a higher concentration for a particular well width. The diamagnetic susceptibility of a hydrogenic donor impurity in GaAs / Ga 1 - x Al x As quantum well systems is discovered in the observation of metal–insulator transition. It is shown that the diamagnetic susceptibility diverges for all critical concentrations for a given well width. The large diamagnetic susceptibility (> 6) is observed at the transition. All the calculations are carried out for infinite and finite barriers, and the results are compared with the existing literature.

Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

2016 ◽  
Vol 30 (22) ◽  
pp. 1650139
Author(s):  
E. B. Al ◽  
F. Ungan ◽  
U. Yesilgul ◽  
E. Kasapoglu ◽  
H. Sari ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Variational Approach ◽  
Nitrogen Concentration ◽  
Effective Mass Approximation ◽  
Donor Impurity ◽  
Transition Energies ◽  
Mass Approximation ◽  
Single Formula

The effects of nitrogen and indium concentrations on the [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]-like donor impurity energy states in a single [Formula: see text] quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.

LASER INDUCED SEMICONDUCTOR–METAL TRANSITION IN A SEMIMAGNETIC QUANTUM WELL

2011 ◽  
Vol 10 (04n05) ◽  
pp. 611-615 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Magnetic Field ◽  
Variational Principle ◽  
Quantum Well ◽  
Effective Mass ◽  
Conduction Band ◽  
Effective Mass Approximation ◽  
Mass Approximation

The effect of laser and magnetic field on the semiconductor–metal transition in a Cd 1-x2 Mn x2 Te / Cd 1-x1 Mn x1 Te / Cd 1-x2 Mn x2 Te quantum well has been investigated using variational principle in effective mass approximation for smaller Mn composition. The effect of non parabolicity of the conduction band has been included in our calculation. The results are presented and discussed.

scholarly journals Diamagnetic Susceptibility of a Confined Donor in a Quantum Dot with Different Confinements

2009 ◽  
Vol 1 (2) ◽  
pp. 200-208 ◽  
Author(s):  
A. J. Peter ◽  
J. Ebenezar
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Harmonic Oscillator ◽  
Diamagnetic Susceptibility ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Quantum Well Wire ◽  
Hydrogenic Donor ◽  
System Geometry

The binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, harmonic oscillator-like and rectangular well-like potentials are calculated as a function of dot radius using a variational procedure within the effective mass approximation. The calculations of the binding energy of the donor impurity as a function of the system geometry have been investigated. A comparison of the eigenstates of a hydrogenic impurity in all the confinements of dots is discussed in detail.  We have computed and compared the susceptibility for a hydrogenic donor in a spherical confinement, harmonic oscillator-like and rectangular well-like potentials for a finite QD and observe a strong influence of the shape of confining potential and geometry of the dot on the susceptibility. Keywords: Quantum dot; Quantum well wire; Quantum well; Diamagnetic susceptibility; Donor impurity. © 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v1i2.1184   

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