The process of electrochemical deposition of zinc in the presence of boron-doped detonation nanodiamonds

2017 ◽  
Vol 39 (4) ◽  
pp. 221-225
Author(s):  
G. K. Burkat ◽  
V. Yu. Dolmatov ◽  
G. S. Aleksandrova ◽  
E. D. Osmanova ◽  
V. Myllymäki ◽  
...  
Keyword(s):  
Electrochemical Deposition ◽  
Detonation Nanodiamonds ◽  
Boron Doped

scholarly journals Study of the Electrochemical Deposition of Cu/Sn Alloy Nanoparticles on Boron Doped Diamond Films for Electrocatalytic Nitrate Reduction

2013 ◽  
Vol 1511 ◽  
Author(s):  
Jorge T. Matsushima ◽  
Andrea B. Couto ◽  
Neidenei G. Ferreira ◽  
Mauricio R. Baldan
Keyword(s):  
Electrochemical Deposition ◽  
Sem Analysis ◽  
Homogeneous Distribution ◽  
Alloy Nanoparticles ◽  
Electrocatalytic Reduction ◽  
Boron Doped Diamond ◽  
Buffer Solution ◽  
Bdd Electrode ◽  
Boron Doped ◽  
Dissolution Peak

ABSTRACTThis paper presents the study of the electrochemical deposition of Cu/Sn alloy nanoparticles on Boron Doped Diamond (BDD) films in order to improve their electrocatalytic activity and selectivity for application in nitrate electrochemical reduction. Cyclic voltammetry measurements evidenced the formation of Cu/Sn alloy electrodeposited on BDD electrode. The electrodeposited Cu/Sn can be better visualized by analyzing the dissolution process. By studying the dissolution peak separately, the dissolution peak of the Sn was obtained at a more positive potential, when compared with the dissolution peak of Cu. From the scanning electronic microscopy (SEM) analysis, the homogeneous distribution of the Cu/Sn alloys particles on BDD surface with grain size in nanometric scale was verified. From X-ray diffraction analysis, two Cu/Sn alloy phases (Cu41Sn11 and Cu10Sn3) were identified for the electrodeposits obtained at -0.5V and charge of 0.26 C. The electrocatalytic reduction of nitrate in 0.1 M Britton-Robinson (BR) buffer solution with pH 9 was analyzed. The BDD electrode modified with Cu/Sn alloy nanoparticles proved to potentiate the electrocatalytic reduction of nitrate.

Electrochemical Deposition of Titanium Oxide on Boron-Doped Diamond Electrodes

2005 ◽  
Vol 8 (10) ◽  
pp. C138 ◽  
Author(s):  
A. Manivannan ◽  
N. Spataru ◽  
K. Arihara ◽  
A. Fujishima
Keyword(s):  
Titanium Oxide ◽  
Electrochemical Deposition ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals The corrosion resistance of zinc coatings in the presence of boron-doped detonation nanodiamonds (DND)

2017 ◽  
Vol 175 ◽  
pp. 012019
Author(s):  
G K Burkat ◽  
G S Alexandrova ◽  
V Yu Dolmatov ◽  
E D Osmanova ◽  
V Myllymäki ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Detonation Nanodiamonds ◽  
Boron Doped ◽  
Zinc Coatings

scholarly journals Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Abdulkareem Afandi ◽  
Ashley Howkins ◽  
Ian W. Boyd ◽  
Richard B. Jackman
Keyword(s):  
Detonation Nanodiamonds ◽  
Boron Doped ◽  
Device Applications

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

A TEM-APFIM INVESTIGATION OF BORON-DOPED Ni3Al

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-209-C2-214 ◽  
Author(s):  
J. A. HORTON ◽  
M. K. MILLER
Keyword(s):  
Boron Doped

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

Analysis of Electrochemical Deposition Process of Permalloy Films

2019 ◽  
Vol 24 (6) ◽  
pp. 547-556
Author(s):  
R.D. Tikhonov ◽  
◽  
S.A. Polomoshnov ◽  
V.V. Amelichev ◽  
D.V. Kostuk ◽  
...  
Keyword(s):  
Electrochemical Deposition ◽  
Deposition Process
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