Design and modeling of graded bandgap amorphous silicon-germanium solar cells fabricated by plasma enhanced chemical vapor deposition

1994 ◽  
Author(s):  
Greg Charles Baldwin
2012 ◽  
Vol 569 ◽  
pp. 27-30
Author(s):  
Bao Jun Yan ◽  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Jing Wei Chen ◽  
Hong Wei Diao ◽  
...  

Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.


1996 ◽  
Vol 426 ◽  
Author(s):  
Seung Jae Baik ◽  
Jinsoo Song ◽  
Koeng Su Lim

AbstractTo obtain high quality ZnO thin films for use as transparent electrodes of amorphous silicon solar cells, hydrogen treatment of the films using photo-chemical vapor deposition was performed for the first time. The as-deposited ZnO thin film was irradiated by UV light during the flow of hydrogen molecules in the presence of photo-sensitizers of mercury. As the treatment time increased, resistivity decreased from 1 × 10−2Ωcm to 2 × 10−3Ωcm. Moreover, haze ratio increased from 20% to 48%. Hydrogen radicals were thought to be playing various roles on the neighborhood of the surface region and the grain boundary region. This new trial gave us new understanding into the relation between hydrogen and ZnO. Moreover, these results could be applied to the process of amorphous silicon solar cells and a possible increase of efficiency is expected.


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