scholarly journals Spectral hole burning studies of Photosystem II

1995 ◽  
Author(s):  
Hai-Chou Chang
Keyword(s):  
Photosystem Ii ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Persistent spectral hole-burning study on photosystem II reaction center reconstructed with dibromothymoquinone

2002 ◽  
Vol 98 (1-4) ◽  
pp. 131-139
Author(s):  
Y Kawamata ◽  
S Machida ◽  
K Horie ◽  
S Itoh ◽  
M Iwaki ◽  
...  
Keyword(s):  
Photosystem Ii ◽  
Reaction Center ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Spectral hole burning at the low-energy absorption edge of photosystem II core complexes

2006 ◽  
Vol 119-120 ◽  
pp. 298-303 ◽  
Author(s):  
Joseph L. Hughes ◽  
Paul J. Smith ◽  
Ron J. Pace ◽  
Elmars Krausz
Keyword(s):  
Photosystem Ii ◽  
Energy Absorption ◽  
Absorption Edge ◽  
Low Energy ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Persistent spectral hole burning in oxygen-evolving photosystem II cores from cyanobacteria and higher plants

2004 ◽  
Vol 108 (1-4) ◽  
pp. 101-105 ◽  
Author(s):  
Barry J. Prince ◽  
Elmars Krausz ◽  
Peterson Årsköld Sindra ◽  
Paul J. Smith ◽  
Ron J. Pace
Keyword(s):  
Photosystem Ii ◽  
Higher Plants ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Oxygen Evolving

Highly Efficient Spectral Hole-Burning in Oxygen-Evolving Photosystem II Preparations†

2004 ◽  
Vol 108 (29) ◽  
pp. 10428-10439 ◽  
Author(s):  
Joseph L. Hughes ◽  
Barry J. Prince ◽  
Elmars Krausz ◽  
Paul J. Smith ◽  
Ron J. Pace ◽  
...  
Keyword(s):  
Photosystem Ii ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Highly Efficient ◽  
Spectral Hole ◽  
Oxygen Evolving

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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