scholarly journals Organic self-assembled monolayers for reconstitution of ion channels on single crystal silicon

2003 ◽  
Author(s):  
Maryna Ornatska
1999 ◽  
Vol 576 ◽  
Author(s):  
S. Supothina ◽  
M. R. De Guire ◽  
T. P. Niesen ◽  
J. Bill ◽  
F. Aldinger ◽  
...  

ABSTRACTNanocrystalline thin films of tin (IV) oxide (cassiterite) have been deposited from aqueous solutions of tin (IV) chloride and hydrochloric acid at 80°C. Substrates were {100} single-crystal silicon wafers, with and without silanol-anchored, sulfonate-terminated organic self-assembled monolayers (SAMs). Using flowing solutions, films with thicknesses of up to 1 μtm have been grown, whereas the thickness of the films from static solutions is limited to about 80 nm. The films were characterized using transmission electron microscopy and Rutherford backscattering spectroscopy. The role of the flow rate and configuration of the deposition chamber is discussed.


1999 ◽  
Vol 599 ◽  
Author(s):  
U. Sampathkumaran ◽  
S. Supothina ◽  
R. Wang ◽  
M. R. De Guire

AbstractIn recent years, several research groups have pursued biomimetic or bio-inspired techniques for the synthesis of ceramic thin films from aqueous solutions at low temperatures. The substrates range from inorganic materials (metals, glass, single-crystal silicon) without special surface preparation, to functionalized organic surfaces such as self-assembled organic monolayers (SAMs). Our results on the deposition of tin (IV) oxide (SnO2, cassiterite) and hydroxyapatite (Ca10(PO4)6(OH)2) thin films on SAMs will be reviewed. The former system forms films via assembly of nano-scale particles on the substrate, while the latter system appears to form films via heterogeneous nucleation. In both cases, the role of the substrate in film formation is discussed.


2014 ◽  
Vol 936 ◽  
pp. 1066-1070
Author(s):  
Shu Hua Teng ◽  
He Pan

Self-assembled composite films of APTES-GA-APTES were successfully prepared on single-crystal silicon substrates through the cross-linking reaction between glutaraldehyde (GA) and two layers of 3-aminopropyltriethoxysilane (APTES). The optimal time to deposit the GA layer on the APTES monolayer was 3 h, during which most amino groups of APTES reacted with the aldehyde groups of GA to form smooth and uniform APTES-GA composite films. The further deposition of another APTES layer led to the generation of three-layer APTES-GA-APTES composite films. Compared to the APTES self-assembled monolayers, the three-layer films displayed a similar surface morphology but a reduced friction coefficient from 0.23 to 0.15 and an extended wear life from 50 s to 820 s due to the introduction of GA.


2005 ◽  
Vol 871 ◽  
Author(s):  
J. Takey ◽  
T. Nishikaw ◽  
T. Takenobu ◽  
H. Shimotani ◽  
S. Kobayashi ◽  
...  

AbstractOrganosilane self-assembled monolayers, embedded in organic single-crystal field-effect transistors, significantly affect subthreshold properties in the transfer characteristics. The monolayer of either polarized or nearly unpolarized molecules is deposited on a SiO2/doped Si substrate before softly attaching a rubrene thin single crystal to form the “laminated crystal” transistors. As a result of effective passivation of the SiO2 surface, the device has achieved a subthreshold swing as low as 0.11 V/decade. It is also demonstrated that threshold gate voltage is shifted by polarization of the monolayers, indicating that threshold of the device is adjustable by the choice of silane materials. Both of the functions are closely associated with low-power applications such as logic-circuit components.


Author(s):  
J. F. Richards ◽  
E. B. Troughton ◽  
R. A. Dennis ◽  
P. E. Russell

Self-assembled monolayers are unique structures and have received considerable attention from microscopists seeking to image the predicted molecular level structure. More recently, practical engineering applications of SAMs have been proposed in areas ranging from corrosion barriers to adhesion promoters to lithographic resists. While some of the applications of interest, most notably the lithographic resists, can be developed on substrates close to the ideal; such as single crystal Si wafers or thin epitaxial films; many others will require the coating of very non-ideal surfaces. These may range from materials such as Al or ferrous based metals to engineering polymeric materials. In this study we have taken a two-pronged approach to develop reliable systematic atomic force microscopy (AFM) techniques for the determination of both microstructure and properties of SAMs on various substrates of interest.We have chosen to investigate n-alkanethiols (SH-(CH2)n-1-CH3) on single crystal gold as our reference system for technique development.


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