scholarly journals Hard carbon film coating by plasma CVD.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 349-352
Author(s):  
Mikio KOBAYAKAWA ◽  
Seita TANEMURA ◽  
Hiroaki NIWA ◽  
Kazuo SAITOH ◽  
Masami IKEYAMA
Keyword(s):  
Carbon Film ◽  
Film Coating ◽  
Plasma Cvd ◽  
Hard Carbon

scholarly journals Hard carbon film coating by plasma CVD.

Shinku ◽  
1988 ◽  
Vol 31 (5) ◽  
pp. 498-502
Author(s):  
Mikio KOBAYAKAWA ◽  
Seita TANEMURA ◽  
Hiroaki NIWA ◽  
Kazuo SAITOH
Keyword(s):  
Carbon Film ◽  
Film Coating ◽  
Plasma Cvd ◽  
Hard Carbon

Porous carbon film electrodes prepared by pulsed discharge plasma CVD

2009 ◽  
Vol 18 (2-3) ◽  
pp. 426-428 ◽  
Author(s):  
Mikio Noda ◽  
Hiroyuki Yukawa ◽  
Masahiro Matsushima ◽  
Hideo Uchida ◽  
Masayoshi Umeno
Keyword(s):  
Porous Carbon ◽  
Discharge Plasma ◽  
Carbon Film ◽  
Pulsed Discharge ◽  
Plasma Cvd ◽  
Carbon Film Electrodes ◽  
Pulsed Discharge Plasma

A pretreatment process for enhanced diamond nucleation on smooth silicon substrates coated with hard carbon films

1994 ◽  
Vol 9 (8) ◽  
pp. 2148-2153 ◽  
Author(s):  
Z. Feng ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Carbon Film ◽  
Laser Raman Spectroscopy ◽  
Spherical Particles ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Pure Hydrogen ◽  
Hard Carbon ◽  
Diamond Nucleation

Diamond nucleation on unscratched silicon substrates coated with thin films of hard carbon was investigated experimentally with a microwave plasma-assisted chemical vapor deposition system. A new pretreatment process was used to enhance the nucleation of diamond. Relatively high diamond nucleation densities of ∼108 cm−2 were achieved by pretreating the carbon-coated silicon substrates with a methane-rich hydrogen plasma at a relatively low temperature for an hour. Scanning electron microscopy and laser Raman spectroscopy studies revealed that diamond nucleation occurred from nanometer-sized spherical particles of amorphous carbon produced during the pretreatment. The nanoparticles possessed a structure different from that of the original hard carbon film, with a broad non-diamond Raman peak centered at ∼1500 cm−1, and a high etching resistance in pure hydrogen plasma. The high diamond nucleation density is attributed to the significant percentage of tetrahedrally bonded (sp3) atomic carbon configurations in the nanoparticles and the presence of sufficient high-surface free-energy sites on the pretreated surfaces.

Formation of Carbon Nanotube by using RF plasma CVD equipment from Acetylene and Hydrogen gases

2000 ◽  
Vol 633 ◽  
Author(s):  
Y. Show ◽  
T. Matsukawa ◽  
M. Iwase ◽  
T. Izumi
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Film ◽  
Hydrogen Gas ◽  
The Other ◽  
Rf Plasma ◽  
Radio Frequency Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Frequency Plasma ◽  
Essential Parameter

AbstractThe carbon nanotubes were grown on the round Ni particles at the growth temperature below 60 °C by the radio frequency plasma CVD equipment from the acetylene and the hydrogen gases. For the low growth of the carbon nanotubes, the acetylene concentration in the hydrogen gas was essential parameter. In the case of the high acetylene concentration above 30 %, the cauliflower-like carbon film was grown. On the other hand, the low acetylene concentration of 10 % realized the low temperature growth of the carbon nanotubes.

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