A pretreatment process for enhanced diamond nucleation on smooth silicon substrates coated with hard carbon films

1994 ◽  
Vol 9 (8) ◽  
pp. 2148-2153 ◽  
Author(s):  
Z. Feng ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Carbon Film ◽  
Laser Raman Spectroscopy ◽  
Spherical Particles ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Pure Hydrogen ◽  
Hard Carbon ◽  
Diamond Nucleation

Diamond nucleation on unscratched silicon substrates coated with thin films of hard carbon was investigated experimentally with a microwave plasma-assisted chemical vapor deposition system. A new pretreatment process was used to enhance the nucleation of diamond. Relatively high diamond nucleation densities of ∼108 cm−2 were achieved by pretreating the carbon-coated silicon substrates with a methane-rich hydrogen plasma at a relatively low temperature for an hour. Scanning electron microscopy and laser Raman spectroscopy studies revealed that diamond nucleation occurred from nanometer-sized spherical particles of amorphous carbon produced during the pretreatment. The nanoparticles possessed a structure different from that of the original hard carbon film, with a broad non-diamond Raman peak centered at ∼1500 cm−1, and a high etching resistance in pure hydrogen plasma. The high diamond nucleation density is attributed to the significant percentage of tetrahedrally bonded (sp3) atomic carbon configurations in the nanoparticles and the presence of sufficient high-surface free-energy sites on the pretreated surfaces.

Diamond nucleation on unscratched silicon substrates coated with various non-diamond carbon films by microwave plasma-enhanced chemical vapor deposition

1995 ◽  
Vol 10 (1) ◽  
pp. 165-174 ◽  
Author(s):  
Z. Feng ◽  
M.A. Brewer ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Hard Carbon ◽  
Diamond Nucleation

The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates

1993 ◽  
Vol 334 ◽  
Author(s):  
M.Y. Mao ◽  
S.S. Tan ◽  
X.K. Zhang ◽  
W.Y. Wang
Keyword(s):  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapour Deposition ◽  
Surface Particle

AbstractPolycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.

A Comparative Study of Nucleation Enhancement Techniques for Plasma Cvd of Diamond Thin Films

1994 ◽  
Vol 349 ◽  
Author(s):  
R.J. Meilunas ◽  
A. Tobin
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Carbon Cluster ◽  
Nucleation Density ◽  
Plasma Cvd ◽  
Diamond Nucleation ◽  
Diamond Surfaces ◽  
Dc Biasing

ABSTRACTThree methods recently proposed for enhancing the nucleation density of thin film diamond on non-diamond surfaces during microwave plasma assisted chemical vapor deposition are investigated. The results of a series of nucleation and growth studies utilizing a dc biasing technique, carbon cluster (C70) thin film overlayers, and thin film metal (Fe) overlayers for diamond nucleation enhancement are presented. The influence of the substrate and plasma processing parameters under which the above nucleation enhancement effects occur has been determined for the three respective techniques.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

In Situ Fhir Spectroscopic Detection of Adsorbed Species on Sapphire Substrates in a Diamond ECR-Pacvd System

1997 ◽  
Vol 502 ◽  
Author(s):  
F. Shahedipour ◽  
S. Zhu ◽  
H. W. White
Keyword(s):  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Diamond Deposition ◽  
Diamond Nucleation ◽  
Sapphire Substrates ◽  
Film Synthesis ◽  
Deposition Conditions

ABSTRACTIn situ Fourier Transform Infrared Reflection Absorption Spectroscopy (FTIRRAS) has been used to study the adsorbed plasma species on sapphire substrate throughout the nucleation and deposition stages under diamond deposition conditions. The focus of this work has been on one of the most fundamental questions in the area of diamond film synthesis that concerns the gas species (precursors) responsible for diamond nucleation and growth especially on foreign substrates. It is experimentally shown here that the most probable precursor for diamond nucleation in methane-hydrogen plasma are methyl radicals.Diamond deposition on randomly oriented sapphire substrates has been successfully achieved under low pressure- low temperature deposition conditions using an electron cyclotron resonance microwave plasma assisted chemical vapor deposition (ECR-PACVD) system. The deposited thin films were characterized by Raman spectroscopy, and scanning electron microscopy.

Bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation

1999 ◽  
Vol 14 (5) ◽  
pp. 2029-2035
Author(s):  
U. C. Oh ◽  
De Gang Cheng ◽  
Fan Xiu Lu ◽  
Jung Ho Je
Keyword(s):  
Energy Dependence ◽  
Amorphous Carbon ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition ◽  
Bonding Structure ◽  
Sputtering Power ◽  
Bombarding Energy

The bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation density (Nd) were studied. Amorphous carbon (a-C) interlayer was deposited by magnetron sputtering. Interestingly, the intensity ratio (ID/IG) of the D band (∼1400 cm−1) to the G band (∼1570 cm−1) in the Raman spectra and the optical band gap of the a-C film were found to be inversely proportional to the sputtering power, that is, to bombarding energy. When diamond was subsequently deposited at 800 °C by microwave plasma chemical vapor deposition (CVD), diamond could be grown only on the interlayers with higher ID/IG (≥2.20), and Nd was increased up to 2 × 106/cm2 with the increase of ID/IG ratio, that is, with the decrease of the bombarding energy. We experimentally confirmed that the amount of the sp3 bonded carbon clusters within the interlayer was dependent on the bombarding energy of the particles, determining the diamond nucleation density. We suggest that the transformation of the amorphous carbon into graphitic carbon should be effectively prevented for the diamond nucleation on the a-C interlayer.

Deposition of Adherent Diamond Coatings on WC-Co Substrates

2005 ◽  
Vol 890 ◽  
Author(s):  
Zhenqing Xu ◽  
Leonid Lev ◽  
Michael Lukitsch ◽  
Ashok Kumar
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Film Structure ◽  
Nucleation Density ◽  
Diamond Coatings ◽  
X Ray Diffraction ◽  
Indentation Tests

ABSTRACTHigh quality well-adhered microcrystalline diamond coatings have been produced by the microwave plasma enhanced chemical vapor deposition (MPECVD) technique on cemented carbide substrates. A multi-interlayer system Cr/CrN/Cr was deposited on the WC-Co substrate before diamond deposition to work as a diffusion barrier. The coated substrate was peened with friable diamond powder to roughen the surface resulting in high nucleation density. Adherent diamond film has been successfully deposited on the substrate at temperature around 700°C with 1.0 % CH4 in Hydrogen plasma. The surface morphology and film structure has been studied by Scanning Electron Microscopy (SEM) and X-Ray diffraction technique. The adhesion of the diamond film has been evaluated by Rockwell indentation tests.

Enhanced Wettability of Cubic Boron Nitride Films by Plasma Treatment

2014 ◽  
Vol 783-786 ◽  
pp. 2051-2055
Author(s):  
Jason Hsiao Chun Yang ◽  
Shinji Kawakami ◽  
Kungen Teii ◽  
Seiichiro Matsumoto
Keyword(s):  
Boron Nitride ◽  
Plasma Treatment ◽  
Inductively Coupled Plasma ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Cubic Boron Nitride ◽  
Contact Angles ◽  
Post Treatment ◽  
Polar Component ◽  
Pure Hydrogen

The wettability of hydrogen plasma-treated cubic boron nitride (cBN) films is studied. The films are prepared on Si substrates by inductively coupled plasma (ICP)-enhanced chemical vapor deposition, and further treated by pure hydrogen ICP and microwave plasma (MWP) separately. The surface roughness of the films and the cBN content in the films show only minor changes after the plasma treatment in any treatment condition. The contact angle of polar water and apolar 1-bromonaphthalene is reduced greatly with the ICP post-treatment, while it is reduced only moderately with the MWP post-treatment. The highly hydrophilic behavior with very low contact angles is attributed to a marked increase in the polar component of the apparent surface free energy up to 34 mJ/m2.

Diamond Nucleation During Biased Chemical Vapor Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
Roseann Csencsits ◽  
Janet Rankin ◽  
Rachel E. Boekenhauer ◽  
Michael K. Kundmann ◽  
Brian W. Sheldon
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Carbon Layer ◽  
Diamond Nucleation

ABSTRACTThe initial stages of bias-enhanced chemical vapor deposition (CVD) of diamond were investigated in a microwave-plasma system. Samples were characterized with TEM and concurrent electron energy loss spectroscopy (EELS) to characterize chemical bonding in the deposited material. The results show that a thin amorphous carbon film is deposited during biasing, and that diamond nucleation occurs on this amorphous film. Isolated regions of crystalline SiC within the amorphous layer were also observed at longer bias times. These regions apparently form by a reaction between the amorphous carbon layer and the silicon substrate.

Stimulation of the diamond nucleation on silicon substrates with a layer of a polymeric precursor in deposition of diamond films by microwave plasma

2012 ◽  
Vol 34 (1) ◽  
pp. 37-43 ◽  
Author(s):  
V. S. Sedov ◽  
V. G. Ral’chenko ◽  
A. A. Khomich ◽  
A. I. Sizov ◽  
T. M. Zvukova ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Silicon Substrates ◽  
Polymeric Precursor ◽  
Diamond Nucleation ◽  
Stimulation Of
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