scholarly journals Microwave ion source for thin oxide film formation.

Shinku ◽  
1991 ◽  
Vol 34 (3) ◽  
pp. 384-386
Author(s):  
Hiroshi MURAKAMI ◽  
Kazumi WATAHIKI ◽  
Akira IWASAKI ◽  
Isao KUDO
Shinku ◽  
1993 ◽  
Vol 36 (3) ◽  
pp. 271-274
Author(s):  
Hiroshi MURAKAMI ◽  
Kazumi WATAHIKI ◽  
Akira IWASAKI ◽  
Isao KUDO

1989 ◽  
Vol 157 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.


1973 ◽  
Vol 4 (34) ◽  
pp. no-no
Author(s):  
P. B. JUN. NEEDHAM ◽  
H. W. JUN. LEAVENWORTH ◽  
T. J. DRISCOLL

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Inoue ◽  
Y Kawagoe ◽  
K. Yamanishi ◽  
M. Tanaka

ABSTRACTAtomic oxygen promotes the oxidation of thin films. The authors developed a silent discharge type atomic oxygen source for thin oxide film formation. The atomic oxygen source consists of a quartz discharge tube and two cylindrical electrodes that are attached to the outside wall of the tube. The atomic oxygen concentration is estimated to be 3%.The atomic oxygen source was installed in an ICB (Ionized Cluster Beam) apparatus and applied to the formation of Er-Ba-Cu-0 thin films. By introducing the atomic oxygen during deposition, a film showing superconductivity at 81K was obtained when the substrate temperature was 570ºC. Also the substrate temperature to obtain a film showing superconductivity at 77K was estimated to be 50 °C lower than that for obtaining superconducting film formation in an atmosphere of 6% ozone. The atomic oxygen source was also applied to SrTiO3 thin film formation. Electrical properties of this film were examined and compared with those of films prepared in an atmosphere of 6% ozone. The dielectric constant of SrTiO3 film was improved from 60 to 180 by introducing atomic oxygen instead of 6% ozone. Therefore the atomic oxygen source was proven to be advantageous for thin oxide film formation.


1996 ◽  
Vol 217-218 ◽  
pp. 78-81 ◽  
Author(s):  
M. Akizuki ◽  
J. Matsuo ◽  
M. Harada ◽  
S. Ogasawara ◽  
A. Doi ◽  
...  

2017 ◽  
Vol 89 (10) ◽  
pp. 5303-5310 ◽  
Author(s):  
Sara Chakri ◽  
Anisha N. Patel ◽  
Isabelle Frateur ◽  
Frédéric Kanoufi ◽  
Eliane M. M. Sutter ◽  
...  

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