Silicon nitride and oxide film formation by the simultaneous use of a microwave ion source and an ICB system

1989 ◽  
Vol 37-38 ◽  
pp. 783-786 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Kazuoki Matsugatani ◽  
Junzo Ishikawa ◽  
Toshinori Takagi
Keyword(s):  
Silicon Nitride ◽  
Oxide Film ◽  
Film Formation ◽  
Ion Source ◽  
Microwave Ion Source ◽  
Simultaneous Use

Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

1989 ◽  
Vol 157 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa
Keyword(s):  
Oxide Film ◽  
Substrate Temperature ◽  
Ionization Energy ◽  
Incident Energy ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Source ◽  
Silicon Oxide Film ◽  
Microwave Ion Source ◽  
Simultaneous Use

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

scholarly journals Microwave ion source for thin oxide film formation.

Shinku ◽  
1991 ◽  
Vol 34 (3) ◽  
pp. 384-386
Author(s):  
Hiroshi MURAKAMI ◽  
Kazumi WATAHIKI ◽  
Akira IWASAKI ◽  
Isao KUDO
Keyword(s):  
Oxide Film ◽  
Film Formation ◽  
Ion Source ◽  
Thin Oxide Film ◽  
Microwave Ion Source ◽  
Thin Oxide

scholarly journals Microwave Ion Source for Thin Oxide Film Formation.

Shinku ◽  
1993 ◽  
Vol 36 (3) ◽  
pp. 271-274
Author(s):  
Hiroshi MURAKAMI ◽  
Kazumi WATAHIKI ◽  
Akira IWASAKI ◽  
Isao KUDO
Keyword(s):  
Oxide Film ◽  
Film Formation ◽  
Ion Source ◽  
Thin Oxide Film ◽  
Microwave Ion Source ◽  
Thin Oxide

Low Temperature Oxide and Nitride Film Depositions by Simultaneous Use of Ionized Cluster Beam Source and Microwave Ion Source

1987 ◽  
Vol 101 ◽  
Author(s):  
Toshinori Takagi ◽  
Gikan H. Takaoka ◽  
Junzo Ishikawa
Keyword(s):  
Substrate Temperature ◽  
Ion Source ◽  
Nitride Film ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
Beam Source ◽  
Microwave Ion Source ◽  
Temperature Oxide ◽  
Simultaneous Use ◽  
Reactive Gas

ABSTRACTAluminum oxide (A12O3), nitride(A1N) and silicon nitride(SiN) films were prepared at a low substrate temperature of 100°C. Film resistivity was higher than 5x1013 Ω-cm and the breakdown voltage was greater than 3x10° V/cm. The films deposited on sapphire and silicon substrates were very flat, and were chemically and thermally stable. The A1-O, A1-N and Si-N bonds could be formed effectively by using both ionized clusters and reactive gas ions, and transparent and good quality films were obtained. Through these results, the simultaneous use of an ionized cluster beam (ICB) system and a microwave ion source was found to have a high potential for preparing oxide and nitride films at a low substrate temperature.

Synthesis and Characterisation of Anodized Powder Metallurgy Mg-Ca Alloy

2018 ◽  
Vol 280 ◽  
pp. 221-225
Author(s):  
C.D. Zuraidawani ◽  
F.W. Norhadira ◽  
Mochd Nazree B. Derman
Keyword(s):  
Powder Metallurgy ◽  
Oxide Film ◽  
Vickers Hardness ◽  
Film Formation ◽  
Surface Hardness ◽  
Powder Metallurgy Method ◽  
Xrd Pattern ◽  
Surface Changes

The Mg-1wt.%Ca alloy was fabricated using powder metallurgy method. The anodizing process were done by using different voltage (5V, 15V, 25V) and concentration of KOH (0.1M, 0.5M, 1.0M). The surface changes on PM Mg/1wt.%Ca resulted by anodizing was analyzed using SEM-EDX and XRD pattern. Meanwhile, surface hardness was measured by micro-Vickers hardness machine. The experiment found different XRD pattern between all non-anodized and anodized samples. The study found that increasing the voltage will increase the hardness while increasing KOH concentration reduced the hardness. The relation of the hardness and oxide film formation can be analyzed using SEM-EDX and XRD pattern. The optimum value for voltage, KOH concentration and hardness are 25V, 0.1M and 27.2 HV. The XRD detect the changes in PM Mg/1wt.% Ca indicates the oxide film formation.

Development of microwave ion source for industrial applications

2014 ◽  
Vol 85 (2) ◽  
pp. 02C306 ◽  
Author(s):  
N. Takahashi ◽  
H. Murata ◽  
H. Mitsubori ◽  
J. Sakuraba ◽  
T. Soga ◽  
...  
Keyword(s):  
Industrial Applications ◽  
Ion Source ◽  
Microwave Ion Source

scholarly journals Oxide Film Formation on a Microcrystalline Al Alloy in Sulfuric Acid

1997 ◽  
Vol 144 (4) ◽  
pp. 1353-1361 ◽  
Author(s):  
S. C. Thomas ◽  
V. I. Birss
Keyword(s):  
Sulfuric Acid ◽  
Oxide Film ◽  
Film Formation ◽  
Al Alloy
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