Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

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Silicon nitride and oxide film formation by the simultaneous use of a microwave ion source and an ICB system

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90298-x ◽

1989 ◽

Vol 37-38 ◽

pp. 783-786 ◽

Cited By ~ 4

Author(s):

Gikan H. Takaoka ◽

Kazuoki Matsugatani ◽

Junzo Ishikawa ◽

Toshinori Takagi

Keyword(s):

Silicon Nitride ◽

Oxide Film ◽

Film Formation ◽

Ion Source ◽

Microwave Ion Source ◽

Simultaneous Use

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Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

IEEE Transactions on Electron Devices ◽

10.1109/16.936559 ◽

2001 ◽

Vol 48 (8) ◽

pp. 1550-1555 ◽

Cited By ~ 85

Author(s):

K. Sekine ◽

Y. Saito ◽

M. Hirayama ◽

T. Ohmi

Keyword(s):

Low Temperature ◽

Oxide Film ◽

Silicon Oxide ◽

Film Formation ◽

Oxygen Radical ◽

High Density ◽

Silicon Oxide Film

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Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.219c ◽

1990 ◽

Vol 29 (Part 1, No. 1) ◽

pp. 219C-219C

Author(s):

Haruki Komano ◽

Youji Ogawa ◽

Tadahiro Takigawa

Keyword(s):

Oxide Film ◽

Focused Ion Beam ◽

Silicon Oxide ◽

Film Formation ◽

Ion Beam ◽

Silicon Oxide Film

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Effects of Magnetic Fields and Excited Plasma Species on Silicon Oxide Film Formation by Microwave Plasma CVD

10.7567/ssdm.1988.a-4-2 ◽

1988 ◽

Author(s):

Takuya Fukuda ◽

Kazuo Suzuki ◽

Yasuhiro Mochizuki ◽

Michio Ohue ◽

Naohiro Momma ◽

...

Keyword(s):

Magnetic Fields ◽

Oxide Film ◽

Silicon Oxide ◽

Microwave Plasma ◽

Film Formation ◽

Plasma Cvd ◽

Silicon Oxide Film ◽

Plasma Species ◽

Microwave Plasma Cvd

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Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.28.2372 ◽

1989 ◽

Vol 28 (Part 1, No. 11) ◽

pp. 2372-2375 ◽

Cited By ~ 10

Author(s):

Haruki Komano ◽

Youji Ogawa ◽

Tadahiro Takigawa

Keyword(s):

Oxide Film ◽

Focused Ion Beam ◽

Silicon Oxide ◽

Film Formation ◽

Ion Beam ◽

Silicon Oxide Film

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Low Temperature Oxide and Nitride Film Depositions by Simultaneous Use of Ionized Cluster Beam Source and Microwave Ion Source

MRS Proceedings ◽

10.1557/proc-101-391 ◽

1987 ◽

Vol 101 ◽

Cited By ~ 3

Author(s):

Toshinori Takagi ◽

Gikan H. Takaoka ◽

Junzo Ishikawa

Keyword(s):

Substrate Temperature ◽

Ion Source ◽

Nitride Film ◽

Silicon Substrates ◽

Cluster Beam ◽

Beam Source ◽

Microwave Ion Source ◽

Temperature Oxide ◽

Simultaneous Use ◽

Reactive Gas

ABSTRACTAluminum oxide (A12O3), nitride(A1N) and silicon nitride(SiN) films were prepared at a low substrate temperature of 100°C. Film resistivity was higher than 5x1013 Ω-cm and the breakdown voltage was greater than 3x10° V/cm. The films deposited on sapphire and silicon substrates were very flat, and were chemically and thermally stable. The A1-O, A1-N and Si-N bonds could be formed effectively by using both ionized clusters and reactive gas ions, and transparent and good quality films were obtained. Through these results, the simultaneous use of an ionized cluster beam (ICB) system and a microwave ion source was found to have a high potential for preparing oxide and nitride films at a low substrate temperature.

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