Annular Illumination and Collection in Solid Immersion

Author(s):  
Stephen Bradley Ippolito ◽  
Hirotoshi Terada

Abstract Tailoring the angular spectrum with annular illumination and collection can significantly improve integrated circuit analysis with an optical microscope, when combined with solid immersion. We present the development, testing, and optimization of a simple and compact apparatus to implement annular illumination and collection in a Hamamatsu iPHEMOS system. We demonstrated improved imaging of an IBM 45nm silicon-oninsulator circuit, with annular illumination and collection in confocal scanning optical microscopy and widefield microscopy with an InGaAs camera.

1997 ◽  
Vol 71 (23) ◽  
pp. 3353-3355 ◽  
Author(s):  
Charles Hubert ◽  
Jeremy Levy ◽  
Adrian C. Carter ◽  
Wontae Chang ◽  
Steven W. Kiechoefer ◽  
...  

Author(s):  
R. Giridharagopal ◽  
T.M. Eiles ◽  
B. Niu

Abstract We present the first known images acquired using near-field scanning optical microscopy (NSOM) through backside silicon on functional integrated circuit samples with higher resolution than conventional fault isolation (FI) tools. NSOM offers the possibility of substantially-improved lateral resolution independent of excitation wavelength. Current FI techniques have challenged the resolution limits of conventional optics technology, even in the best solid immersion lens (SIL) to date. This poses a problem for future process technology nodes. This resolution barrier is a by-product of the diffraction limit. In Fourier terms, a conventional lens filters out highfrequency information and thus limits the resolution. In NSOM, by placing a tip with an aperture in extreme proximity to the surface it is possible to capture the near-field light that contains high-frequency information, thereby circumventing the diffraction limit. The tangible benefit is that the resolution is substantially improved. We show that NSOM can be used in backside subsurface imaging of silicon, mirroring the paradigm used in typical optical FI. We present optical reflectance data through ~100 nm of remaining backside Si on functional 22 nm CMOS IC parts with lateral resolution approaching 100 nm. We then discuss potential methods for using NSOM in practical backside fault isolation applications and for improving signal-to-noise ratio (SNR).


Author(s):  
Edward Keyes ◽  
Jason Abt

Abstract Historically, the extraction of circuitry from an integrated circuit was normally within the abilities of the average FA laboratory and could be accomplished with little more than an optical microscope and film camera. Dramatic increases in the level of integration and number of metal interconnect levels coupled with shrinking feature sizes have rendered these techniques obsolete. This paper describes techniques and methods for the fast, semi-automated extraction of detailed circuit schematics from modern, nanometer scale integrated circuits.


1990 ◽  
Vol 95 (3) ◽  
pp. 1-1
Author(s):  
D. M. SHOTTON

Journal of Cell Science Volume 94, Part 2, October 1989, pages 175–206. The citation ‘Reproduced, with permission, from Koch et al. (1987).’ given in the figure legend of Fig. 13 is incorrect. The citation should read ‘Reproduced, with permission, from White, J. G. et al. (1987). Further details of the cells, antigen and labelling conditions used, and other examples of such confocal images may be found in Koch et al. (1987).’


2017 ◽  
Vol 42 (12) ◽  
pp. 2306 ◽  
Author(s):  
Ravi Kiran Attota ◽  
Haesung Park

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