Determination of the Source of an Electrical Overstress Event to a Digital Variable Gain Amplifier Module

2014 ◽  
Author(s):  
Thiri Htun ◽  
Steve Brockett
Keyword(s):  
Mechanical Damage ◽  
Variable Gain Amplifier ◽  
Variable Gain ◽  
Root Cause ◽  
Physical Evidence ◽  
Electrical Stress ◽  
Destructive Analysis ◽  
Electrical Overstress ◽  
Non Destructive

Abstract This paper presents a systematic approach of failure analysis to determine the source of electrical overstress condition to a digital variable gain amplifier (DVGA) module where the failure was due to attenuation accuracy. Having consideration of the physical evidence on the failed devices and the root cause of the failure gives an insight of how the mechanical damage caused an electrical overstress exposure to the devices. The paper provides information on destructive analysis and non-destructive analysis conducted for determining the root cause of the failure of the DVGA module. Analysis revealed that devices failed due to an electrical overstress exposure through mechanical damage to the passivation of the metal-2 lines. The mechanical damage occurred during die-sort testing due to misalignment of the probes which delivered unintended electrical stress to the devices.

Texture and Strain Experiments at OPAL

2010 ◽  
Vol 638-642 ◽  
pp. 2823-2828 ◽  
Author(s):  
Ulf Garbe ◽  
Oliver Kirstein ◽  
Andrew Studer ◽  
Vladimir Luzin ◽  
Klaus Dieter Liss
Keyword(s):  
Residual Stresses ◽  
New Technologies ◽  
Physical And Mechanical Properties ◽  
Local Variation ◽  
Inhomogeneous Deformation ◽  
New Materials ◽  
Destructive Analysis ◽  
Properties Of Materials ◽  
Non Destructive

In response to the development of new materials and the application of materials and components in new technologies the direct measurement, calculation and evaluation of textures and residual stresses has gained worldwide significance in recent years. Non-destructive analysis for phase specific residual stresses and textures is only possible by means of diffraction methods. The determination of global texture and the local variation of texture for example by inhomogeneous deformation are very important due to the coherence between the texture and the physical and mechanical properties of materials.

Preserving Evidence for Root Cause Investigations with Halogen-Free Microwave Induced Plasma

2018 ◽  
Author(s):  
C. Odegard ◽  
Andy Burnett ◽  
J. Tang ◽  
J. Wang
Keyword(s):  
Integrated Circuit ◽  
Microwave Induced Plasma ◽  
Root Cause ◽  
Physical Evidence ◽  
Die Surface ◽  
Preservation Of Evidence ◽  
Evidence Gathering ◽  
Customer Returns ◽  
Halogen Free

Abstract Accurate root cause determination of integrated circuit devices necessitates the preservation of evidence during failure analysis. Identifying the cause of systemic defects requires capturing physical evidence provided by very few customer returns. Each piece of physical evidence is valuable due to the scarcity of returns in most cases less than 1 ppm. Harvesting infrequent physical evidence requires that each attempt to decapsulate a fail unit has a high probability of retaining the material that caused the defect. A measured method that retains the critical evidence is the fastest way to solve a defect driven systemic failure mechanism because one gathers the evidence more efficiently. This paper presents two case studies of improved evidence gathering using halogen-free microwave induced plasma (MIP) decapsulation during the root cause investigations. This relatively new method of decapsulation enabled us to preserve evidence, including any changes to the metal and die surface structures along with the presence of contaminants or by-products of failure mechanisms.

Mis-identified Failures in FETs

2008 ◽  
Author(s):  
Mark Gores
Keyword(s):  
Rapid Determination ◽  
Short Circuit ◽  
Mechanical Damage ◽  
Power Supplies ◽  
Screening Methods ◽  
Power Switching ◽  
Root Cause ◽  
Switching Power ◽  
Cause Of Failure

Abstract Several recent failure analyses have found that what appeared to be typical source to drain over current damage, was actually caused by intermittently open circuited gate bonds. In power switching applications, such as inverters and switching power supplies, the timing of the transistor’s turn ons and turn offs can be critical. For example in an inverter if the transistor between the positive supply and phase A does not turn off before the transistor between the negative supply and phase A turns on there will be a short circuit between the positive and negative supplies resulting in a high current condition and the failure of both transistors. The original cause of the failure can be masked after the catastrophic failure of the die. The gate does not necessarily remain open circuited. It can reestablish continuity due to the short circuiting of the gate on the die, which causes arcing at the open bond. It is easy to overlook this mechanism in the normal FA process, since there is obvious and sometimes spectacular damage to the die and usually pressure to make a rapid determination of the root cause of failure. The gate wires are more likely to become open circuited because there is usually only 1 wire and it is sometimes a much smaller wire. The wires can become open circuited for a variety of reasons: Mechanical damage to the leads. Inadequate bonds at either end of the wire. Excessive intermetallic formation. Several case histories of open gate wires as well as other open bonds, how they were discovered, and possible screening methods will be discussed.

scholarly journals Usage of FTIR-ATR as Non-Destructive Analysis of Selected Toxic Dyes

2017 ◽  
Vol 25 (40) ◽  
pp. 103-111 ◽  
Author(s):  
Alica Bartošová ◽  
Lenka Blinová ◽  
Maroš Sirotiak ◽  
Anna Michalíková
Keyword(s):  
Detection Method ◽  
Rapid Determination ◽  
Infrared Spectrometry ◽  
Real Problem ◽  
Spectral Interpretation ◽  
Destructive Analysis ◽  
Non Destructive ◽  
Identification And Characterization

Abstract The degradation of the environment which is due to the discharge of polluting wastewater from industrial sources poses a real problem in several countries. Textile industries use large volumes of water in their operations, discharging thus large volume of wastewater into the environment, most of which is untreated. The wastewater contains a variety of chemicals from various stages of process operations, including desizing, scouring, bleaching and dyeing. The main purpose of this paper is to introduce Infrared Spectrometry with Fourier transformation as a non-destructive method for study, identifation and rapid determination of selected representatives of cationic (Methylene Blue), azo (Congo Red, Eriochrome Black T) and nitroso (Naphthol Green B) dyes. In conjunction with the ATR technique, FTIR offers a reliable detection method of dyes without extraction by other dangerous substances. Spectral interpretation of dye spectra revealed valuable information about the identification and characterization of each group of dyes.

A High Efficiency Variable Gain Amplifier Circuit with Controllable Transconductance Amp

2009 ◽  
Vol 129 (10) ◽  
pp. 1968-1969
Author(s):  
Tetsuro Okura ◽  
Shunsuke Okura ◽  
Toru Ido ◽  
Kenji Taniguchi
Keyword(s):  
High Efficiency ◽  
Variable Gain Amplifier ◽  
Amplifier Circuit ◽  
Variable Gain

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

A Fully Differential Variable Gain Amplifier for Portable Impedance Sensing Applications

2019 ◽  
Vol 7 ◽  
Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Active Area ◽  
Variable Gain Amplifier ◽  
Cmos Process ◽  
Current Steering ◽  
Impedance Sensing ◽  
Variable Gain ◽  
Fully Differential ◽  
Sensing Applications ◽  
Constant Bandwidth

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.

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