Role of native metal oxide layer on emitted metal L line in low-voltage electron-probe microanalysis

2009 ◽  
Vol 26 (1) ◽  
pp. 21-24 ◽  
Author(s):  
Erkki Heikinheimo ◽  
Xavier Llovet
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Low Voltage ◽  
Native Metal ◽  
Voltage Electron ◽  
Metal Oxide Layer

Low-Voltage Electron-Probe Microanalysis of Fe–Si Compounds Using Soft X-Rays

2013 ◽  
Vol 19 (6) ◽  
pp. 1698-1708 ◽  
Author(s):  
Phillip Gopon ◽  
John Fournelle ◽  
Peter E. Sobol ◽  
Xavier Llovet
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Low Voltage ◽  
Mass Attenuation Coefficient ◽  
X Rays ◽  
X Ray ◽  
Voltage Electron ◽  
Increased Sensitivity ◽  
Quantitative Analyses ◽  
Areas Of Interest

AbstractConventional electron-probe microanalysis has an X-ray analytical spatial resolution on the order of 1–4 μm width/depth. Many of the naturally occurring Fe–Si compounds analyzed in this study are smaller than 1 μm in size, requiring the use of lower accelerating potentials and nonstandard X-ray lines for analysis. Problems with the use of low-energy X-ray lines (soft X-rays) of iron for quantitative analyses are discussed and a review is given of the alternative X-ray lines that may be used for iron at or below 5 keV (i.e., accelerating voltage that allows analysis of areas of interest <1 μm). Problems include increased sensitivity to surface effects for soft X-rays, peak shifts (induced by chemical bonding, differential self-absorption, and/or buildup of carbon contamination), uncertainties in the mass attenuation coefficient for X-ray lines near absorption edges, and issues with spectral resolution and count rates from the available Bragg diffractors. In addition to the results from the traditionally used Fe Lα line, alternative approaches, utilizing Fe Lβ, and Fe Ll-η lines, are discussed.

Electron Probe Microanalysis Through Coated Oxidized Surfaces

2019 ◽  
Vol 25 (05) ◽  
pp. 1112-1129 ◽  
Author(s):  
Mike B. Matthews ◽  
Ben Buse ◽  
Stuart L. Kearns
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Low Voltage ◽  
Layer Structure ◽  
Oxide Thickness ◽  
Linear Functions ◽  
Voltage Electron ◽  
Before And After ◽  
20 Nm ◽  
Good Agreement

AbstractLow voltage electron probe microanalysis (EPMA) of metals can be complicated by the presence of a surface oxide. If a conductive coating is applied, analysis becomes one of a three-layer structure. A method is presented which allows for the coating and oxide thicknesses and the substrate intensities to be determined. By restricting the range of coating and oxide thicknesses, tc and to respectively, x-ray intensities can be parameterized using a combination of linear functions of tc and to. tc can be determined from the coating element k-ratio independently of the oxide thickness. to can then be derived from the O k-ratio and tc. From tc and to the intensity components of the k-ratios from the oxide layer and substrate can each be derived. Modeled results are presented for an Ag on Bi2O3 on Bi system, with tc and to each ranging from 5 to 20 nm, for voltages of 5–20 kV. The method is tested against experimental measurements of Ag- or C-coated samples of polished Bi samples which have been allowed to naturally oxidize. Oxide thicknesses determined both before and after coating with Ag or C are consistent. Predicted Bi Mα k-ratios also show good agreement with EPMA-measured values.

scholarly journals Low-Voltage Electron-Probe Microanalysis of Uranium

2021 ◽  
pp. 1-18
Author(s):  
Mike B. Matthews ◽  
Stuart L. Kearns ◽  
Ben Buse
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Low Voltage ◽  
Voltage Electron

Abstract

DSSCs synergic effect in thin metal oxide layer-functionalized SnO2 photoanodes

2014 ◽  
Vol 295 ◽  
pp. 64-69 ◽  
Author(s):  
Sambhaji S. Bhande ◽  
Dipak V. Shinde ◽  
Kailas K. Tehare ◽  
Supriya A. Patil ◽  
Rajaram S. Mane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Thin Metal ◽  
Synergic Effect ◽  
Metal Oxide Layer

Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Resistive Switching ◽  
Point Contact ◽  
Resistive Switching Memory ◽  
Metal Oxide Layer ◽  
Switching Memory

Electron Probe Microanalysis of Silicon and the Role of the Macrophage in Proximal (Capsule) and Distant Sites in Augmentation Mammaplasty Patients

1995 ◽  
Vol 95 (3) ◽  
pp. 513-519 ◽  
Author(s):  
William B. Greene ◽  
Dominic S. Raso ◽  
Lyle G. Walsh ◽  
Russell A. Harley ◽  
Richard M. Silver
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Augmentation Mammaplasty

Thermal Effects During Low-Voltage Electron-Probe X-Ray Spectral Microanalysis with Nanometer Localization

2017 ◽  
Vol 59 (10) ◽  
pp. 1061-1064 ◽  
Author(s):  
A. Yu. Kuzin ◽  
M. A. Stepovich ◽  
V. B. Mityukhlyaev ◽  
P. A. Todua ◽  
M. N. Filippov
Keyword(s):  
Thermal Effects ◽  
Electron Probe ◽  
Low Voltage ◽  
X Ray ◽  
Voltage Electron

Adhesive Enabling Technology for Directly Plating Copper onto Glass

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001913-001936
Author(s):  
Lutz Brandt ◽  
Zhiming Liu ◽  
Hailuo Fu ◽  
Sara Hunegnaw ◽  
Tafadzwa Magaya
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
High Speed ◽  
Sol Gel ◽  
Peel Strength ◽  
Significant Loss ◽  
Organic Substrates ◽  
New Approach ◽  
Glass Substrates ◽  
Metal Oxide Layer

Reliable adhesion of copper to glass is a major hurdle for the entry of glass substrates into the electronic packaging market. Otherwise, glass is a strong competitor to organic substrates due to its superior flatness, thermal and dielectric properties. These are essential requirements for high density interconnects, high speed signal transfer and IC substrate packaging. Typically, adhesion on glass is achieved by sputtering a thin metallic adhesive (Ti) and copper seed layer followed by galvanic plating. This paper presents a promising wet-chemical alternative to sputtering. In this new approach a 50-200 nm thick adhesive metal oxide layer is deposited by a modified sol gel process followed by sintering, thus enabling electroless, and galvanic metal plating directly on glass. Formerly the thickness of the galvanic copper layer constituted a major challenge leading to its facile delamination from the glass. With the new approach, Cu film thickness of over 50 μm can be applied without delamination. Adhesion at 15 μm Cu thickness as measured by 90o peel strength tests can achieve 5 N/cm or even higher values, while 2 N/cm appear to be sufficient to prevent delamination. In comparison, Ti/Cu sputtered glass substrates achieve at best 1.5 N/cm at the same copper thickness, while electroless Cu seeded glass substrates without the adhesive metal oxide layer show no adhesion. The effect of glass roughness on adhesion was also studied. It does appear to have only a marginal impact on adhesion. On the other hand, the glass type has bearing on the achievable adhesion values. The plated layer stands up well to reflow shock (260C) and HAST without significant loss of adhesion. Good adhesion has been also demonstrated inside the via holes of patterned substrates without indication of blockages by the process. The process is versatile in that it is also applicable to ceramic substrates such as aluminum oxide.

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