scholarly journals Bulk Etch Rate and the Activation Energy of the CR-39 Detector using Thickness Difference Method

2018 ◽  
Vol 13 (2) ◽  
pp. 114-126
Author(s):  
Abrar K. Mustafa Al-Ramadhni ◽  
Saeed H. Saeed Al-Niaemi
Keyword(s):  
Activation Energy ◽  
Difference Method ◽  
Etch Rate ◽  
Bulk Etch Rate

Effects of UV irradiation on Fission-fragment track parameters in Makrofol-E detector

2019 ◽  
Vol 28 (12) ◽  
pp. 1950110 ◽  
Author(s):  
R. K. Jain ◽  
S. Kumar ◽  
A. Kumar ◽  
Aniket Kumar ◽  
M. K. Singh ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Fission Fragment ◽  
Etch Rate ◽  
Activation Energies ◽  
Track Detector ◽  
Nuclear Track Detector ◽  
Bulk Etch Rate ◽  
Track Etch Rate ◽  
Track Etch

This study gives information about the effects of UV (here, the wavelength is 160 nm) exposure on the bulk etch rate ([Formula: see text], track etch rate ([Formula: see text], the detector sensitivity ([Formula: see text], critical angle ([Formula: see text] and etching efficiency ([Formula: see text] of Makrofol-E Solid State Nuclear Track Detector. The effect of UV on the activation energy of Makrofol-E was also studied. Nine pieces of Makrofol-E Solid State Nuclear Track Detector were separated into three equal sets as set A, set B and set C. Set A, named as reference set (Fission fragment FF), was irradiated to [Formula: see text]Cf source. Set B, called as post-exposed ([Formula: see text]), was first irradiated to [Formula: see text]Cf and then exposed to UV. The process was reversed for set C named as pre-exposed ([Formula: see text]) at the same conditions. From the results, it is concluded that radiation produces small but significant effect on activation energy [Formula: see text] of bulk etch rate for pre-exposed and post-exposed samples. Also, the activation energies [Formula: see text] of track etch rate for post-exposed and Fission fragment samples are within experimental uncertainty. The energy carried by UV radiation may be responsible for cross networking processes occurring during the exposure which results small change in activation energies for both [Formula: see text] and [Formula: see text]. The [Formula: see text] can be increased by hardening detector material of the pre-exposed detector.

Thermally Induced Activation Energy of Crystalline Silicon in Alkaline Solution

1970 ◽  
Vol 11 ◽  
pp. 215-222
Author(s):  
SK Lamichhane
Keyword(s):  
Activation Energy ◽  
Potassium Hydroxide ◽  
Etch Rate ◽  
Crystalline Silicon ◽  
Lattice Parameter ◽  
Device Fabrication ◽  
Strong Anisotropy ◽  
Temperature Dependent ◽  
Thermal Agitation ◽  
Thermally Induced

Etching of crystalline silicon by potassium hydroxide (KOH) etchant with temperature variation has been studied. Results presented here are temperature dependent ER (etch rate) along the crystallographic orientations. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrates that the contribution of microscopic activation energy effectively controls the etching process. Such a strong anisotropy in ER on KOH allows us a precious control of lateral dimensions of the silicon microstructure as well as surface growth of the crystal during micro device fabrication. Key words: anisotropy; activation energy; etch rate; lattice parameter; micromachining DOI: 10.3126/njst.v11i0.4148Nepal Journal of Science and Technology 11 (2010) 215-222

Measurement of bulk etch rate of CR-39 with atomic force microscopy

1998 ◽  
Vol 142 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
N. Yasuda ◽  
M. Yamamoto ◽  
N. Miyahara ◽  
N. Ishigure ◽  
T. Kanai ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Etch Rate ◽  
Force Microscopy ◽  
Bulk Etch Rate ◽  
Atomic Force

scholarly journals Thermal Induced Microstructures of KOH Etched Silicon Surface

1970 ◽  
Vol 5 (1) ◽  
pp. 62-70 ◽  
Author(s):  
Shobha Kanta Lamichhane
Keyword(s):  
Activation Energy ◽  
Silicon Surface ◽  
Etch Rate ◽  
Low Voltage ◽  
Micro Electro Mechanical System ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Engineering And Technology ◽  
Etched Silicon

Anisotropic KOH etching of silicon for the fabrication of Micro-electro mechanical system (MEMS) part is based on surface finish and angular dependence of etch rate, creating thin diaphragm. The absolute values of orientation dependent etch rate is found to vary with thermal agitation. In this work, experimental results of etch rate is found quite consistent with simulated and are justify with their unusual values of activation energy along different planes. The various sites that an atom can occupy are not equivalent of their energy; some are more favorable to removal than others. In this paper attention is given to demonstrate thermal activation energy is the prime parameter that influences the behavior of etching mechanism as well as AFM surface morphology. Low-voltage contact mode atomic force microscopy (AFM) has been employed to analyze the morphology of the etched silicon surface at relevant different temperature. A systematic variation in morphological growth leads to stabilized surface structure under the influence of associated activation energy is concluded. Key words: Etching; Anisotropy; Etch rate; diaphragm; MEMS; LPCVD; SOI; AFM DOI: 10.3126/kuset.v5i1.2847 Kathmandu University Journal of Science, Engineering and Technology Vol.5, No.1, January 2009, pp 62-70

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