Thermally Induced Activation Energy of Crystalline Silicon in Alkaline Solution

1970 ◽  
Vol 11 ◽  
pp. 215-222
Author(s):  
SK Lamichhane
Keyword(s):  
Activation Energy ◽  
Potassium Hydroxide ◽  
Etch Rate ◽  
Crystalline Silicon ◽  
Lattice Parameter ◽  
Device Fabrication ◽  
Strong Anisotropy ◽  
Temperature Dependent ◽  
Thermal Agitation ◽  
Thermally Induced

Etching of crystalline silicon by potassium hydroxide (KOH) etchant with temperature variation has been studied. Results presented here are temperature dependent ER (etch rate) along the crystallographic orientations. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrates that the contribution of microscopic activation energy effectively controls the etching process. Such a strong anisotropy in ER on KOH allows us a precious control of lateral dimensions of the silicon microstructure as well as surface growth of the crystal during micro device fabrication. Key words: anisotropy; activation energy; etch rate; lattice parameter; micromachining DOI: 10.3126/njst.v11i0.4148Nepal Journal of Science and Technology 11 (2010) 215-222

scholarly journals Experimental investigation on anisotropic surface properties of crystalline silicon

BIBECHANA ◽  
2012 ◽  
Vol 8 ◽  
pp. 59-66
Author(s):  
Shobha Kanta Lamichhane
Keyword(s):  
Activation Energy ◽  
Potassium Hydroxide ◽  
Etch Rate ◽  
Crystalline Silicon ◽  
Etching Rate ◽  
Energy Concentration ◽  
Temperature Dependent ◽  
Thermal Agitation ◽  
Anisotropic Surface ◽  
Experimental Values

Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrate that the contribution of microscopic activation energy that effectively controls the etching process. Such a strong anisotropy in KOH allows us a precious control of lateral dimensions of the silicon microstructure.Keywords: microfabrication; activation energy; concentration; anisotropy; crystal planeDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4828  BIBECHANA 8 (2012) 59-66  

scholarly journals Thermal Activation of Crystalline Silicon Ions in Alkaline Solution

1970 ◽  
Vol 7 (7) ◽  
pp. 15-18
Author(s):  
Shobha Kanta Lamichhane
Keyword(s):  
Activation Energy ◽  
Etch Rate ◽  
Thermal Activation ◽  
Crystalline Silicon ◽  
Micro Electro Mechanical System ◽  
Alkaline Solutions ◽  
Force Microscopy ◽  
Microstructure Fabrication ◽  
Atomic Force ◽  
Key Techniques

Anisotropic wet chemical etching of silicon in alkaline solutions (KOH) is one of the key techniques for the manufacture of microstructure. Fabrication of Micro-electro mechanical system (MEMS) part demand smooth surface finish and angular dependent etch rate. The absolute values of orientation dependent etch rate is found to vary with thermal agitation. In this work, experimental results of etch rate is found with their unusual values of activation energy along different planes. The various sites that an atom can occupy are not equivalent of their energy; some are more favorable to removal than others. In this paper attention is being given to demonstrate thermal activation is the prime factor that influences the behavior of etching mechanism as well as surface morphology. Atomic force microscopy (AFM) has been employed to analyze the morphology of the etched silicon surface at relevant elevated temperature. A systematic variation in morphological growth leads to stabilized surface structure under the influence of associated activation energy. Keywords: Activation energy; Etching; Anisotropy; Etch rate; MEMS; LPCVD; SOI. DOI: 10.3126/sw.v7i7.3817 Scientific World Vol.7(7) 2009 pp.15-18

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

2006 ◽  
Vol 21 (12) ◽  
pp. 1681-1685 ◽  
Author(s):  
R M Rubinger ◽  
G M Ribeiro ◽  
A G de Oliveira ◽  
H A Albuquerque ◽  
R L da Silva ◽  
...  
Keyword(s):  
Activation Energy ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Variable Range

Hydrogenation of methylacetylene. III. The reaction of methylacetylene with hydrogen catalyzed by nickel, copper, and their alloys

1968 ◽  
Vol 46 (4) ◽  
pp. 623-633 ◽  
Author(s):  
R. S. Mann ◽  
K. C. Khulbe
Keyword(s):  
Activation Energy ◽  
Nickel Catalyst ◽  
Hydrogen Pressure ◽  
Constant Volume ◽  
Temperature Dependent ◽  
Nickel Copper ◽  
Wide Range ◽  
Initial Hydrogen Pressure

The reaction between methylacetylene and hydrogen over unsupported nickel, copper, and their alloys has been investigated in a static constant volume system between 20 and 220 °C for a wide range of reactant ratios. The order of reaction with respect to hydrogen was one and nearly independent of temperature. While the order of reaction with respect to methylacetylene over nickel catalyst was slightly negative and temperature dependent, it was always positive and nearly independent of temperature for copper and copper-rich alloys. Selectivity was independent of initial hydrogen pressure for nickel and copper only; for others it decreased rapidly with increasing hydrogen pressure. The overall activation energy varied between 9 and 21.2 kcal/g mole. Selectivity and extent of polymerization increased with increasing amount of copper in the alloy.

Magnetic properties of undoped and Co-doped n-type β–FeSi2.5 single crystals

2002 ◽  
Vol 17 (11) ◽  
pp. 2960-2965 ◽  
Author(s):  
E. Arushanov ◽  
L. Ivanenko ◽  
D. Eckert ◽  
G. Behr ◽  
U. K. Rößler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
External Field ◽  
Single Crystals ◽  
Spin Glasses ◽  
Paramagnetic Centers ◽  
Temperature Dependent ◽  
Paramagnetic Curie Temperature ◽  
Co Doped

Results of magnetization and magnetic susceptibility measurements on undoped and Co-doped FeSi2.5 single crystals are presented. The temperature dependence of the magnetic susceptibility of the Co-doped sample in the range of 5–300 K can be explained by temperature-dependent contributions due to paramagnetic centers and the carriers excited thermally in the extrinsic conductivity region. The values of the paramagnetic Curie temperature and activation energy of the donor levels were estimated. It is also shown that the magnetic susceptibility of Co-doped samples cooled in zero external field and in a field are different. This resembles the properties of spin-glasses and indicates the presence of coupling between magnetic centers.

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

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