scholarly journals Modulation Bandwidth Enhancement of Monolithically Integrated Mutually Coupled Distributed Feedback Laser

2020 ◽  
Vol 10 (12) ◽  
pp. 4375
Author(s):  
Wu Zhao ◽  
Yuanfeng Mao ◽  
Dan Lu ◽  
Yongguang Huang ◽  
Lingjuan Zhao ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Amplifier ◽  
Injection Locking ◽  
Distributed Feedback ◽  
Modulation Bandwidth ◽  
Bandwidth Enhancement ◽  
Monolithically Integrated ◽  
Locking Range ◽  
Dfb Laser ◽  
Mutual Injection Locking

Modulation bandwidth enhancement of directly modulated semiconductor lasers (DMLs) has attracted broad interest to accommodate the tremendously growing demand for network traffic. In this paper, a monolithically integrated mutually coupled (IMC) laser for the O-band is demonstrated both numerically and experimentally. The direct modulation bandwidth was enhanced utilizing a photon–photon resonance (PPR) effect based on the mutual injection-locking technique. The IMC laser consisted of two distributed feedback (DFB) laser sections with a semiconductor optical amplifier (SOA) section in between. The relationship between the PPR frequency and SOA length was analyzed numerically to achieve a flat modulation response by optimizing the SOA length. Then, an enhanced 3-dB bandwidth of 38.7 GHz was realized experimentally, a nearly threefold enhancement over the modulation bandwidth of a solitary DFB laser at the same bias. Moreover, clear open eyes up to 40 Gb/s transmission over a 25-km single-mode fiber were achieved. Although the dynamic extinction ratio of the eye diagram was 1.1 dB, it can be further improved by increasing the mutual injection locking range of the IMC laser.

Integrated Distributed Feedback Laser and Optical Amplifier

1991 ◽  
Vol 240 ◽  
Author(s):  
N. K. Dutta ◽  
J. Lopata ◽  
R. Logan ◽  
T. Tanbun-Ek
Keyword(s):  
Active Region ◽  
Spectral Width ◽  
Optical Amplifier ◽  
Distributed Feedback ◽  
Performance Characteristics ◽  
Distributed Feedback Laser ◽  
Electrical Isolation ◽  
Current Confinement ◽  
Dfb Laser ◽  
And Performance

ABSTRACTThe fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi-insulating Fe doped InP layers for current confinement to the active region, electrical isolation between the two sections and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 μm and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio.

scholarly journals Mutual Injection Locking of Monolithically Integrated Coupled-Cavity DBR Lasers

2011 ◽  
Vol 23 (13) ◽  
pp. 908-910 ◽  
Author(s):  
Anna Tauke-Pedretti ◽  
G. Allen Vawter ◽  
Erik J. Skogen ◽  
Greg Peake ◽  
Mark Overberg ◽  
...  
Keyword(s):  
Injection Locking ◽  
Monolithically Integrated ◽  
Dbr Lasers ◽  
Coupled Cavity ◽  
Mutual Injection Locking

scholarly journals 13-μm dual-wavelength DFB laser chip with modulation bandwidth enhancement by integrated passive optical feedback

2016 ◽  
Vol 24 (25) ◽  
pp. 28869 ◽  
Author(s):  
Fei Guo ◽  
Dan Lu ◽  
Lu Guo ◽  
Songtao Liu ◽  
Wu Zhao ◽  
...  
Keyword(s):  
Optical Feedback ◽  
Dual Wavelength ◽  
Modulation Bandwidth ◽  
Bandwidth Enhancement ◽  
Dfb Laser ◽  
Laser Chip

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

1996 ◽  
Vol 07 (03) ◽  
pp. 409-428
Author(s):  
YI LUO ◽  
WEI WANG
Keyword(s):  
Semiconductor Lasers ◽  
Distributed Feedback ◽  
Device Structure ◽  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Integrated Devices ◽  
Dfb Laser ◽  
Integrated Device ◽  
First Time ◽  
Multi Quantum Well

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

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