scholarly journals Limitations of Structural Insight into Ultrafast Melting of Solid Materials with X-ray Diffraction Imaging

2021 ◽  
Vol 11 (11) ◽  
pp. 5157
Author(s):  
Victor Tkachenko ◽  
Malik M. Abdullah ◽  
Zoltan Jurek ◽  
Nikita Medvedev ◽  
Vladimir Lipp ◽  
...  
Keyword(s):  
Structural Changes ◽  
Imaging Techniques ◽  
Single Crystal Silicon ◽  
X Ray Diffraction ◽  
Solid Materials ◽  
Crystal Silicon ◽  
X Ray ◽  
Linac Coherent Light Source ◽  
Diffraction Imaging ◽  
Peak Fluence

In this work, we analyze the application of X-ray diffraction imaging techniques to follow ultrafast structural transitions in solid materials using the example of an X-ray pump–X-ray probe experiment with a single-crystal silicon performed at a Linac Coherent Light Source. Due to the spatially non-uniform profile of the X-ray beam, the diffractive signal recorded in this experiment included contributions from crystal parts experiencing different fluences from the peak fluence down to zero. With our theoretical model, we could identify specific processes contributing to the silicon melting in those crystal regions, i.e., the non-thermal and thermal melting whose occurrences depended on the locally absorbed X-ray doses. We then constructed the total volume-integrated signal by summing up the coherent signal contributions (amplitudes) from the various crystal regions and found that this significantly differed from the signals obtained for a few selected uniform fluence values, including the peak fluence. This shows that the diffraction imaging signal obtained for a structurally damaged material after an impact of a non-uniform X-ray pump pulse cannot be always interpreted as the material’s response to a pulse of a specific (e.g., peak) fluence as it is sometimes believed. This observation has to be taken into account in planning and interpreting future experiments investigating structural changes in materials with X-ray diffraction imaging.

Full-field X-ray diffraction microscopy using polymeric compound refractive lenses

2014 ◽  
Vol 47 (6) ◽  
pp. 1882-1888 ◽  
Author(s):  
J. Hilhorst ◽  
F. Marschall ◽  
T. N. Tran Thi ◽  
A. Last ◽  
T. U. Schülli
Keyword(s):  
Imaging Techniques ◽  
Light And Electron Microscopy ◽  
Added Value ◽  
Acquisition Time ◽  
Imaging Method ◽  
X Ray Diffraction ◽  
Polymeric Compound ◽  
Full Field ◽  
X Ray ◽  
Diffraction Imaging

Diffraction imaging is the science of imaging samples under diffraction conditions. Diffraction imaging techniques are well established in visible light and electron microscopy, and have also been widely employed in X-ray science in the form of X-ray topography. Over the past two decades, interest in X-ray diffraction imaging has taken flight and resulted in a wide variety of methods. This article discusses a new full-field imaging method, which uses polymer compound refractive lenses as a microscope objective to capture a diffracted X-ray beam coming from a large illuminated area on a sample. This produces an image of the diffracting parts of the sample on a camera. It is shown that this technique has added value in the field, owing to its high imaging speed, while being competitive in resolution and level of detail of obtained information. Using a model sample, it is shown that lattice tilts and strain in single crystals can be resolved simultaneously down to 10−3° and Δa/a= 10−5, respectively, with submicrometre resolution over an area of 100 × 100 µm and a total image acquisition time of less than 60 s.

scholarly journals Cryogenic Coherent X-ray Diffraction Imaging Techniques for Structural Analyses of Biological Cells and Cellular Organelles

2018 ◽  
Vol 24 (S2) ◽  
pp. 14-15
Author(s):  
Amane Kobayashi ◽  
Yuki Takayama ◽  
Tomotaka Oroguchi ◽  
Koji Okajima ◽  
Mao Oide ◽  
...  
Keyword(s):  
Imaging Techniques ◽  
Biological Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Cellular Organelles

Residual stresses in a SiC whisker-reinforced alumina composite by high-temperature X-ray diffraction

1994 ◽  
Vol 9 (1) ◽  
pp. 50-53 ◽  
Author(s):  
Benjamin L. Ballard ◽  
Paul K. Predecki ◽  
Camden R. Hubbard
Keyword(s):  
Residual Stress ◽  
Single Crystal Silicon ◽  
Linear Extrapolation ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Fine Grained ◽  
Silicon Carbide Whiskers ◽  
Alumina Composite ◽  
Residual Strains

Residual strains and microstresses are evaluated for both phase of a hot-pressed, fine-grained α-alumina reinforced with 25 wt% (29 vol%) single-crystal silicon carbide whiskers at temperatures from 25 to 1000 °C. The sample was maintained in a nonoxidizing environment while measurements of the interplaner spacing of alumina (146) and SiC (511 + 333) were made using X-ray diffraction methods. The residual strains were profiled at temperature increments of 250 °C from which the corresponding microstresses were calculated. Linear extrapolation of the SiC ε33 profile indicates that the strains are completely relaxed at a temperature of approximately 1470 °C. These residual stress relaxation results suggest that elevated temperature toughness and fracture strength of this composite may result from cooperative mechanisms.

scholarly journals Влияние буферного слоя por-Si  на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки

2019 ◽  
Vol 53 (1) ◽  
pp. 70
Author(s):  
П.В. Середин ◽  
Д.Л. Голощапов ◽  
Д.С. Золотухин ◽  
А.С. Леньшин ◽  
А.Н. Лукин ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Emission Intensity ◽  
Molecular Beam ◽  
Single Crystal Silicon ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Crystal Silicon ◽  
X Ray ◽  
Plasma Activation ◽  
Single Crystal Silicon Substrate

AbstractIntegrated heterostructures exhibiting a nanocolumnar morphology of the In_ x Ga_1 –_ x N film are grown on a single-crystal silicon substrate ( c -Si(111)) and a substrate with a nanoporous buffer sublayer ( por -Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si buffer layer offer a number of advantages over growth on the c -Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In_ x Ga_1 –_ x N layer. The growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por -Si buffer layer is ~25% higher than the emission intensity for the film grown on the c -Si substrate.

Life Time Predictions through X-Ray Defect Analysis of MEMS Devices

2008 ◽  
Vol 584-586 ◽  
pp. 518-522 ◽  
Author(s):  
Antonia Neels ◽  
Philippe Niedermann ◽  
Alex Dommann
Keyword(s):  
Single Crystal Silicon ◽  
Life Time ◽  
Defect Analysis ◽  
Mems Devices ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Crystal Silicon ◽  
Rocking Curve ◽  
X Ray ◽  
Curve Method

In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favor failure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping were used to determine the strain as well as the defect concentration in the crystal. The investigations also include the numerical simulation of deformations.

Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

2010 ◽  
Vol 25 (2) ◽  
pp. 149-153
Author(s):  
Isaac Vander ◽  
R. W. Zuneska ◽  
F. J. Cadieu
Keyword(s):  
Single Crystal Silicon ◽  
Magnetic Films ◽  
Mass Attenuation Coefficient ◽  
Silicon Substrates ◽  
Film Material ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

X-Ray Reflectivity and GISAXS Study of Derelaxation in Kr Implanted Si

2001 ◽  
Vol 678 ◽  
Author(s):  
P. Duč ◽  
B. Pivac ◽  
O. Milat ◽  
S. Bernstorff ◽  
I Zulim
Keyword(s):  
Critical Angle ◽  
Structural Changes ◽  
Single Crystal Silicon ◽  
Grazing Incidence ◽  
Crystal Silicon ◽  
Reflectivity Curve ◽  
X Ray ◽  
X Ray Scattering ◽  
Ion Energies ◽  
Scattering Technique

AbstractThe structural changes induced in single crystal silicon implanted with Krypton above the amorphisation threshold were studied by X-ray reflectivity together with Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with Krypton with two different ion energies. A well-defined layer, 220 nm thick of amorphous silicon, rich in Krypton, was formed below the top, undisturbed layer. A series of samples consist of as-implanted, relaxed, and a number of samples with increased level of defects induced by additional Kr implantation. Additional implantation caused changes in the films composition and thickness, which was well evidenced in reflectivity curve, while only minor changes of surface roughness and critical angle were detected in GISAXS spectra.

Sign in / Sign up

Export Citation Format

Share Document