scholarly journals Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

2019 ◽  
Vol 9 (3) ◽  
pp. 383
Author(s):  
Boyang Lu ◽  
Lai Wang ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
Changzheng Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Integrated Intensity ◽  
Calculation Results

In this paper, the optical properties of GaN-based green light emitting diode (LED) are investigated and the internal quantum efficiency (IQE) values are measured by temperature dependent photoluminescence (TDPL) and power dependent photoluminescence (PDPL) methods. The "S-shaped” shift of peak wavelength measured at different temperature disappears gradually and the spectra broadening can be observed with increasing excitation power. The IQE calculation results of TDPL, which use the integrated intensity measured at low temperature as unity, can be modified by PDPL in order to acquire more accurate IQE values.

scholarly journals Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

2018 ◽  
Vol 9 (1) ◽  
pp. 77 ◽  
Author(s):  
Muhammad Usman ◽  
Urooj Mushtaq ◽  
Dong-Guang Zheng ◽  
Dong-Pyo Han ◽  
Muhammad Rafiq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Recombination Rate ◽  
Auger Recombination ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Light Emitting ◽  
Hole Confinement ◽  
Electromechanical Field

To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficiency of the proposed W-LED. The improvement is associated with significantly improved hole confinement due to the localization of indium in the active region, leading to improved radiative recombination rate. In addition, the proposed device shows reduced defect-assisted Shockley-Read-Hall (SRH) recombination rate as well as Auger recombination rate. Moreover, the efficiency rolloff in the proposed device is associated with increased built-in electromechanical field.

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

2018 ◽  
Vol 112 (5) ◽  
pp. 052105 ◽  
Author(s):  
Guijuan Zhao ◽  
Lianshan Wang ◽  
Huijie Li ◽  
Yulin Meng ◽  
Fangzheng Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Green Light ◽  
Diode Structure ◽  
Structural And Optical Properties ◽  
Light Emitting
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