Evaluation of the internal quantum efficiency in blue and green light-emitting diodes using the rate equation model

2013 ◽  
Vol 63 (2) ◽  
pp. 180-184 ◽  
Author(s):  
Han-Youl Ryu ◽  
Guen-Hwan Ryu ◽  
Sang-Ho Lee ◽  
Hyun-Joong Kim
Keyword(s):  
Quantum Efficiency ◽  
Rate Equation ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Equation Model ◽  
Light Emitting ◽  
Rate Equation Model

Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Oliver Brandt ◽  
Manfred Ramsteiner ◽  
Timur Flissikowski ◽  
Jens Herfort ◽  
Holger T. Grahn
Keyword(s):  
Rate Equation ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Spin Dynamics ◽  
Polarized Light ◽  
Equation Model ◽  
Light Emitting ◽  
Rate Equation Model

Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

2013 ◽  
Vol 13 (8) ◽  
pp. 1600-1603 ◽  
Author(s):  
Han-Youl Ryu ◽  
Ki-Seong Jeon ◽  
Jun-Ho Sung ◽  
Min-Woo Lee ◽  
Euna Lee ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Rate Equation ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Silicon Substrates ◽  
Light Emitting

Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

2020 ◽  
Vol 67 (9) ◽  
pp. 837-842
Author(s):  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Munaza Munsif ◽  
Shahzeb Malik ◽  
Noor Ul Islam ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Light Emitting

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Low Temperatures ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting
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