scholarly journals The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 585
Author(s):  
Mingyu Zhang ◽  
Kuankuan Lu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
Xiaochen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Localized States ◽  
Oxide Semiconductor ◽  
High Definition ◽  
Force Microscopy ◽  
Amorphous Oxide Semiconductor ◽  
Photoconductivity Decay ◽  
Output Characteristics ◽  
New Generation

The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

scholarly journals Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing

2021 ◽  
Author(s):  
Diki Purnawati ◽  
Juan Paolo S. Bermundo ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Gallium Oxide ◽  
Thin Film Transistor ◽  
Shallow Donor ◽  
Wide Bandgap ◽  
Oxide Semiconductor ◽  
Hydrogen Annealing ◽  
Solution Processed ◽  
Amorphous Oxide Semiconductor

Abstract Developing semiconducting solution-processed ultra-wide bandgap (UWB) amorphous oxide semiconductor (AOS) is an emerging area of research interest. However, obtaining electrical conduction on it is quite challenging. Here, we demonstrate the insulator-to-semiconductor conversion of solution-processed a-Ga2Ox (Eg~4.8 eV) through hydrogen annealing. The successful conversion was reflected by the switching thin-film transistor (TFT) with μsat of 10-2 cm2/Vs. We showed that H incorporated after hydrogen annealing acts as a shallow donor which increased the carrier concentration and shifted the EF closer to the CBM.

A framework for assessing amorphous oxide semiconductor thin-film transistor passivation

2012 ◽  
Vol 20 (10) ◽  
pp. 589-595 ◽  
Author(s):  
John F. Wager ◽  
Ken Hoshino ◽  
Eric S. Sundholm ◽  
Rick E. Presley ◽  
Ram Ravichandran ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Semiconductor Thin Film

scholarly journals Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1044
Author(s):  
Huansong Tang ◽  
Kuankuan Lu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
Dengming Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Performance ◽  
Thin Film Transistor ◽  
Preparation Process ◽  
Defect States ◽  
Photoconductivity Decay ◽  
New Generation

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (Vth) of 1.9 V, a mobility (µsat) of 24.4 cm2·V−1·s−1, an Ion/Ioff ratio of 2.03 × 107, and a subthreshold swing (SS) of 0.14 V·dec−1.

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