scholarly journals Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing

2021 ◽  
Author(s):  
Diki Purnawati ◽  
Juan Paolo S. Bermundo ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Gallium Oxide ◽  
Thin Film Transistor ◽  
Shallow Donor ◽  
Wide Bandgap ◽  
Oxide Semiconductor ◽  
Hydrogen Annealing ◽  
Solution Processed ◽  
Amorphous Oxide Semiconductor

Abstract Developing semiconducting solution-processed ultra-wide bandgap (UWB) amorphous oxide semiconductor (AOS) is an emerging area of research interest. However, obtaining electrical conduction on it is quite challenging. Here, we demonstrate the insulator-to-semiconductor conversion of solution-processed a-Ga2Ox (Eg~4.8 eV) through hydrogen annealing. The successful conversion was reflected by the switching thin-film transistor (TFT) with μsat of 10-2 cm2/Vs. We showed that H incorporated after hydrogen annealing acts as a shallow donor which increased the carrier concentration and shifted the EF closer to the CBM.

Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide

2018 ◽  
Vol 216 (5) ◽  
pp. 1800198 ◽  
Author(s):  
Keisuke Ide ◽  
Yuki Futakado ◽  
Naoto Watanabe ◽  
Junghwan Kim ◽  
Takayoshi Katase ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Gallium Oxide ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Semiconductor Thin Film ◽  
Metal Doped

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor

2017 ◽  
Vol 29 (21) ◽  
pp. 1607055 ◽  
Author(s):  
Guhyun Kwon ◽  
Keetae Kim ◽  
Byung Doo Choi ◽  
Jeongkyun Roh ◽  
Changhee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Interfacial Layers ◽  
Semiconductor Thin Film

scholarly journals The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 585
Author(s):  
Mingyu Zhang ◽  
Kuankuan Lu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
Xiaochen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Localized States ◽  
Oxide Semiconductor ◽  
High Definition ◽  
Force Microscopy ◽  
Amorphous Oxide Semiconductor ◽  
Photoconductivity Decay ◽  
Output Characteristics ◽  
New Generation

The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

Solution-Processed Ca-doped InZnO Oxide Semiconductor for Thin Film Transistor Applications

2013 ◽  
Author(s):  
D. Liu ◽  
Y. Wang ◽  
Y.X. Yu ◽  
X. Gong ◽  
Y. Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Solution Processed
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