scholarly journals Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 568 ◽  
Author(s):  
F.V. Grigoriev ◽  
V.B. Sulimov ◽  
A.V. Tikhonravov
Keyword(s):  
Silicon Dioxide ◽  
Atomistic Simulation ◽  
Helical Structure ◽  
High Energy ◽  
Glancing Angle Deposition ◽  
High Porosity ◽  
Regular Structures ◽  
Silicon Dioxide Films ◽  
Glancing Angle ◽  
Porous Silicon Dioxide

The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 ÷ 1.4 g/cm3. This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.

scholarly journals Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 220
Author(s):  
Fedor V. Grigoriev ◽  
Vladimir B. Sulimov ◽  
Alexander V. Tikhonravov
Keyword(s):  
Film Thickness ◽  
Silicon Dioxide ◽  
Film Growth ◽  
Glancing Angle Deposition ◽  
Dynamics Simulation ◽  
Silicon Dioxide Films ◽  
Initial Stage ◽  
Calculated Stress ◽  
Glancing Angle ◽  
Deposited Films

Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data.

Ultra low-k porous silicon dioxide films from a plasma process

2001 ◽  
Author(s):  
Qingyan Han ◽  
Wei Chen ◽  
C. Waldfried ◽  
O. Escorcia ◽  
N.M. Sbrockey ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Dioxide ◽  
Plasma Process ◽  
Silicon Dioxide Films ◽  
Low K ◽  
Porous Silicon Dioxide

Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

2007 ◽  
Vol 353-358 ◽  
pp. 2920-2923
Author(s):  
Ke Jia Li ◽  
Xia Xiao ◽  
Yu Feng Jin
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Silicon Dioxide ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Critical Parameters ◽  
Sio2 Films ◽  
Silicon Dioxide Films ◽  
Porous Sio2 ◽  
Porous Silicon Dioxide

Porous silicon dioxide films featuring low dielectric constant are of great scientific and commercial interest because of their outstanding potential for application to microelectronic interconnect. However, some reliability problems arise in porous SiO2 films due to their poor mechanical performance. Therefore, it is very important to understand the mechanical and electrical properties of porous SiO2 films. New 2-D models with circle pores and 3-D models with cubic pores are proposed in this work. Simulated results of porous SiO2 structures in the case of periodic and random arrangement, which are implemented through ANSYS, are also provided. Critical parameters such as Young’s modulus E and dielectric constant k of porous films are investigated. Calculation results show that dielectric constant reaches as low as 2.5 when porosity of films is about 40%, while E keeps over 3 GPa if porosity remains in the range from 30% to 40%.

scholarly journals Optical properties of zigzag nickel nanostructures obtained at different deposition angles

2021 ◽  
Vol 53 (3) ◽  
pp. 347-353
Author(s):  
Jelena Potocnik ◽  
Maja Popovic
Keyword(s):  
Optical Properties ◽  
Structural Analysis ◽  
Glancing Angle Deposition ◽  
High Porosity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle ◽  
Deposited Films ◽  
Angle Deposition ◽  
Nickel Nanostructures

In this study, nickel (Ni) thin films were deposited at two different angles (65o and 85o) using Glancing Angle Deposition technique, to the thicknesses of 60 - 290 nm. Structural analysis of the deposited films was performed by scanning electron microscopy and X-ray diffraction, while spectroscopic ellipsometry was used for the investigation of optical properties. Electrical resitivity of the samples was determined by four-point probe method. Structural analysis showed that the Ni films grow in a shape of zigzag nanocolumns, where the deposition angle strongly affects their porosity. As the thickness of the films increase they absorb light strongly and become less dense. Besides, samples deposited at the angle of 85o exhibit higher values of electrical resistivity as compared to the samples deposited at the angle of 65o, which can be correlated with high porosity and the growth mechanism of the deposited nanostructures.

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