The Effects of Doping on the Electronic Characteristics and Adsorption Behavior of Silicon Polyprismanes

Konstantin Grishakov; Konstantin Katin; Mikhail Maslov

doi:10.3390/computation8020025

The Effects of Doping on the Electronic Characteristics and Adsorption Behavior of Silicon Polyprismanes

Computation ◽

10.3390/computation8020025 ◽

2020 ◽

Vol 8 (2) ◽

pp. 25

Author(s):

Konstantin Grishakov ◽

Konstantin Katin ◽

Mikhail Maslov

Keyword(s):

Hydrogen Atom ◽

Silicon Atom ◽

Atomic Hydrogen ◽

Quantum Chemical ◽

Hydrogen Adsorption ◽

Impurity Center ◽

Small Diameter ◽

Carbon Doping ◽

Boron Doped ◽

Doped Silicon

Quantum–chemical calculations of the electronic characteristics of carbon and boron-doped silicon polyprismanes were carried out, and the atomic hydrogen adsorption on these structures was analyzed. It was established that silicon polyprismanes doped with boron and carbon retained their metallicity predicted earlier. It was shown that the doping of polyprismanes made them more thermodynamically stable. For the silicon prismanes doped with boron or carbon, hydrogen adsorption was found to be energetically favorable. In the case of boron-doped prismanes, adsorption on the boron impurity was much more advantageous than on the neighboring silicon nodes. For the carbon doping, the adsorption energy of polyprismane with a small diameter weakly depended on the position of the hydrogen atom near the impurity center. However, for the C-doped polyprismanes with a larger diameter, the hydrogen adsorption on the silicon atom belonging to the ring with impurity is more energetically favorable than the adsorption on the silicon atom from the adjacent ring.

Hydrogen Spillover Mechanisms over a Graphite Surface

EPJ Web of Conferences ◽

10.1051/epjconf/201922402009 ◽

2019 ◽

Vol 224 ◽

pp. 02009

Author(s):

Dmitry V. Leshchev

Keyword(s):

Hydrogen Atom ◽

Atomic Hydrogen ◽

Quantum Chemical ◽

Hydrogen Spillover ◽

Graphite Surface ◽

Carbon Surface ◽

Single Quantum ◽

Carbon Sheet ◽

Quantum Chemical Approach ◽

Calculated Activation

Four different mechanisms of hydrogen spillower over carbon surface are considered in the framework of a single quantum-chemical approach. Two of them, described in the literature, are the physical migration of a bonded hydrogen atom along the surface and the edge of the graphene. One of the mechanisms proposed by the author does not include the migration of atomic hydrogen, but is realized via a transfer of carbon radical over a carbon sheet and generation of H atom in another place. Calculated activation energies of all four mechanisms are compared.

Preparation of integrated circuits for TEM electromigration in situ studies

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145753 ◽

1986 ◽

Vol 44 ◽

pp. 882-883

Author(s):

J. V. Maskowitz ◽

W. E. Rhoden ◽

D. R. Kitchen ◽

R. E. Omlor ◽

P. F. Lloyd

Keyword(s):

Integrated Circuits ◽

Crystallographic Orientation ◽

Silicon Wafers ◽

Minimum Size ◽

Test Vehicle ◽

In Situ Studies ◽

Boron Doped ◽

Doped Silicon ◽

Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Water and Atomic Hydrogen Adsorption on Magnetite (001)

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.9b07160 ◽

2019 ◽

Vol 123 (43) ◽

pp. 26662-26672 ◽

Cited By ~ 1

Author(s):

Björn Arndt ◽

Marcus Creutzburg ◽

Elin Grånäs ◽

Sergey Volkov ◽

Konstantin Krausert ◽

...

Keyword(s):

Atomic Hydrogen ◽

Hydrogen Adsorption

Single-charge tunneling in uncoupled boron-doped silicon nanochains

Chemical Physics Letters ◽

10.1016/j.cplett.2009.11.047 ◽

2010 ◽

Vol 484 (4-6) ◽

pp. 258-260 ◽

Cited By ~ 2

Author(s):

D.D.D. Ma ◽

K.S. Chan ◽

D.M. Chen ◽

S.T. Lee

Keyword(s):

Single Charge ◽

Boron Doped ◽

Doped Silicon ◽

Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽

10.1002/solr.202100406 ◽

2021 ◽

Author(s):

Bruno Vicari Stefani ◽

Moonyong Kim ◽

Matthew Wright ◽

Anastasia Soeriyadi ◽

Dmitriy Andronikov ◽

...

Keyword(s):

Solar Cells ◽

Stability Study ◽

Silicon Wafers ◽

Heterojunction Solar Cells ◽

Boron Doped ◽

Doped Silicon ◽

Silicon Heterojunction Solar Cells

Recording and storage of information in boron-doped silicon using YAG:Nd laser

10.1117/12.226226 ◽

1995 ◽

Cited By ~ 1

Author(s):

Juris Blums ◽

Arthur Medvids

Keyword(s):

Boron Doped ◽

Doped Silicon ◽

And Storage

Model of atomic hydrogen adsorption on thin gold film surface

Vacuum ◽

10.1016/0042-207x(94)90194-5 ◽

1994 ◽

Vol 45 (2-3) ◽

pp. 299-301 ◽

Cited By ~ 19

Author(s):

L. Stobiński ◽

R. Duś

Keyword(s):

Atomic Hydrogen ◽

Hydrogen Adsorption ◽

Gold Film ◽

Film Surface ◽

Thin Gold Film

Quantum chemical studies of the chemisorption of atomic hydrogen on copper and silver clusters

Surface Science ◽

10.1016/0039-6028(85)91061-1 ◽

1985 ◽

Vol 163 (2-3) ◽

pp. 285-302 ◽

Cited By ~ 19

Author(s):

J. Flad ◽

G. Igel-Mann ◽

M. Dolg ◽

H. Preuss ◽

H. Stoll

Keyword(s):

Atomic Hydrogen ◽

Quantum Chemical ◽

Silver Clusters ◽

Chemical Studies ◽

Quantum Chemical Studies

Dynamic characteristics of dislocations in highly boron-doped silicon

Journal of Applied Physics ◽

10.1063/1.1367407 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5788-5790 ◽

Cited By ~ 22

Author(s):

I. Yonenaga ◽

T. Taishi ◽

X. Huang ◽

K. Hoshikawa

Keyword(s):

Dynamic Characteristics ◽

Boron Doped ◽

Doped Silicon

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-505-501 ◽

1997 ◽

Vol 505 ◽

Cited By ~ 1

Author(s):

Kazuyuki Mizuhara ◽

Shinichi Takahashi ◽

Jyunichi Kurokawa ◽

Noboru Morita ◽

Yoshitaro Yoshida

Keyword(s):

Raman Spectroscopy ◽

Temperature Effects ◽

Simultaneous Observation ◽

Stress Evaluation ◽

Advantages And Disadvantages ◽

Micro Raman Spectroscopy ◽

Boron Doped ◽

Doped Silicon ◽

Fluid Cooling ◽

Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.