p-Type Polymers for Templated Crystallization of Perovskite Films and Interface Optimization for High Performance Solar Cells

The purity of the perovskite material is of paramount importance as it determines the optoelectronic properties and, hence, the device performance. However, the error during the experiment and incomplete crystallization is inevitable, leading to a low quality. Here, two p-type polymers were designed to template the crystallization of perovskite to obtain perovskite films with higher crystallinity and higher phase purity. The polymers at the perovskite/transport interface could also improve the charge transfer and, thus, the device performance. In this study, the highest efficiency device achieved an efficiency value of ~19% with improved open-circuit voltage and fill factor.

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A novel p-type and metallic dual-functional Cu–Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells

Chemical Communications ◽

10.1039/c6cc04299f ◽

2016 ◽

Vol 52 (71) ◽

pp. 10708-10711 ◽

Cited By ~ 6

Author(s):

Qinxian Lin ◽

Yantao Su ◽

Ming-Jian Zhang ◽

Xiaoyang Yang ◽

Sheng Yuan ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Performance Improvement ◽

High Performance ◽

Fill Factor ◽

Open Circuit Voltage ◽

Open Circuit ◽

Thin Film Solar Cells ◽

Dual Functional ◽

P Type

Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells.

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Dual Interfacial Modifications Enable High Performance Semitransparent Perovskite Solar Cells with Large Open Circuit Voltage and Fill Factor

Advanced Energy Materials ◽

10.1002/aenm.201602333 ◽

2016 ◽

Vol 7 (9) ◽

pp. 1602333 ◽

Cited By ~ 111

Author(s):

Qifan Xue ◽

Yang Bai ◽

Meiyue Liu ◽

Ruoxi Xia ◽

Zhicheng Hu ◽

...

Keyword(s):

Solar Cells ◽

High Performance ◽

Fill Factor ◽

Open Circuit Voltage ◽

Perovskite Solar Cells ◽

Open Circuit

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Ultra-low p-doping of poly(3-hexylthiophene) and its impact on polymer aggregation and photovoltaic performance

Organic Photonics and Photovoltaics ◽

10.1515/oph-2016-0001 ◽

2016 ◽

Vol 4 (1) ◽

Cited By ~ 3

Author(s):

Marcel M. Said ◽

Yadong Zhang ◽

Raghunath R. Dasari ◽

Dalaver H. Anjum ◽

Rahim Munir ◽

...

Keyword(s):

Solar Cells ◽

Fill Factor ◽

Open Circuit Voltage ◽

Photovoltaic Performance ◽

Photovoltaic Cells ◽

Open Circuit ◽

Device Performance ◽

Long Range Order ◽

P3ht Film ◽

Low Levels

AbstractPoly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.

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The introduction of a perovskite seed layer for high performance perovskite solar cells

Journal of Materials Chemistry A ◽

10.1039/c8ta07617k ◽

2018 ◽

Vol 6 (41) ◽

pp. 20138-20144 ◽

Cited By ~ 3

Author(s):

Jaeki Jeong ◽

Hak-Beom Kim ◽

Yung Jin Yoon ◽

Na Gyeong An ◽

Seyeong Song ◽

...

Keyword(s):

Solar Cells ◽

High Performance ◽

Open Circuit Voltage ◽

Perovskite Solar Cells ◽

Open Circuit ◽

Device Performance ◽

Pure Crystal ◽

Perovskite Layer ◽

Perovskite Crystal ◽

Planar Heterojunction

A compact seed perovskite layer (CSPL) with a p–i–n planar heterojunction structure for perovskite solar cells achieved a 19.24% power conversion efficiency with a record open circuit voltage of 1.16 V and 20.37% PCE was achieved with a CSPL assisted n–i–p structure in a pure crystal perovskite film. The CSPL assists vertical growth of the perovskite crystal to enhance device performance.

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Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells

Journal of Materials Chemistry A ◽

10.1039/c3ta14628f ◽

2014 ◽

Vol 2 (15) ◽

pp. 5450-5454 ◽

Cited By ~ 4

Author(s):

Hyun-Sub Shim ◽

Jung-Hung Chang ◽

Seung-Jun Yoo ◽

Chih-I. Wu ◽

Jang-Joo Kim

Keyword(s):

Electronic Structure ◽

Solar Cells ◽

Organic Solar Cells ◽

Fill Factor ◽

Open Circuit Voltage ◽

Open Circuit ◽

Device Performance

The electronic structure of an interconnection unit affects not only the open circuit voltage but also the fill factor in tandem organic solar cells.

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Solar Cells: Dual Interfacial Modifications Enable High Performance Semitransparent Perovskite Solar Cells with Large Open Circuit Voltage and Fill Factor (Adv. Energy Mater. 9/2017)

Advanced Energy Materials ◽

10.1002/aenm.201770047 ◽

2017 ◽

Vol 7 (9) ◽

Author(s):

Qifan Xue ◽

Yang Bai ◽

Meiyue Liu ◽

Ruoxi Xia ◽

Zhicheng Hu ◽

...

Keyword(s):

Solar Cells ◽

High Performance ◽

Fill Factor ◽

Open Circuit Voltage ◽

Perovskite Solar Cells ◽

Open Circuit ◽

Energy Mater

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Microcrystalline (Si,Ge):H Solar Cells

MRS Proceedings ◽

10.1557/proc-762-a7.6 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Jianhua Zhu ◽

Vikram L. Dalal

Keyword(s):

Solar Cells ◽

Buffer Layer ◽

Quantum Efficiency ◽

Fill Factor ◽

Open Circuit Voltage ◽

Defect Density ◽

Cell Structure ◽

Open Circuit ◽

Base Layer ◽

Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽

10.1515/nanoph-2020-0634 ◽

2021 ◽

Vol 0 (0) ◽

Author(s):

Rui He ◽

Tingting Chen ◽

Zhipeng Xuan ◽

Tianzhen Guo ◽

Jincheng Luo ◽

...

Keyword(s):

Solar Cells ◽

High Performance ◽

Open Circuit Voltage ◽

Perovskite Solar Cells ◽

Wide Bandgap ◽

Open Circuit ◽

Transport Layer ◽

Electron Transport Layer ◽

Tandem Solar Cells ◽

Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

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