scholarly journals Fractional-Order Chaotic Memory with Wideband Constant Phase Elements

Entropy ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 422 ◽  
Author(s):  
Jiri Petrzela

This paper provides readers with three partial results that are mutually connected. Firstly, the gallery of the so-called constant phase elements (CPE) dedicated for the wideband applications is presented. CPEs are calculated for 9° (decimal orders) and 10° phase steps including ¼, ½, and ¾ orders, which are the most used mathematical orders between zero and one in practice. For each phase shift, all necessary numerical values to design fully passive RC ladder two-terminal circuits are provided. Individual CPEs are easily distinguishable because of a very high accuracy; maximal phase error is less than 1.5° in wide frequency range beginning with 3 Hz and ending with 1 MHz. Secondly, dynamics of ternary memory composed by a series connection of two resonant tunneling diodes is investigated and, consequently, a robust chaotic behavior is discovered and reported. Finally, CPEs are directly used for realization of fractional-order (FO) ternary memory as lumped chaotic oscillator. Existence of structurally stable strange attractors for different orders is proved, both by numerical analyzed and experimental measurement.

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Todd J. Freeborn ◽  
Ahmed S. Elwakil ◽  
Brent Maundy

Three circuit models using constant phase elements are investigated to represent the human body impedance against contact currents from 40 Hz to 110 MHz. The parameters required to represent the impedance are determined using a nonlinear least squares fitting (NLSF) applied to the averaged human body impedance dataset. The three fractional-order models with 4, 6, and 7 parameters are compared to an already existing integer-order, 11-parameter model. Simulations of the fractional-order models impedance are presented and discussed along with their limitations.


1991 ◽  
Vol 52 (2-3) ◽  
pp. 544-550 ◽  
Author(s):  
Shi Gang Zhou ◽  
M. Sweeny ◽  
J.M. Xu ◽  
O. Berolo

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes

Sign in / Sign up

Export Citation Format

Share Document