An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

An-Jye Tzou; Dan-Hua Hsieh; Szu-Hung Chen; Yu-Kuang Liao; Zhen-Yu Li; Chun-Yen Chang; Hao-Chung Kuo

doi:10.3390/electronics5020028

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Electronics ◽

10.3390/electronics5020028 ◽

2016 ◽

Vol 5 (4) ◽

pp. 28 ◽

Cited By ~ 10

Author(s):

An-Jye Tzou ◽

Dan-Hua Hsieh ◽

Szu-Hung Chen ◽

Yu-Kuang Liao ◽

Zhen-Yu Li ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Carbon Doping ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Gan On Si

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Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aad455 ◽

2018 ◽

Vol 51 (34) ◽

pp. 345102 ◽

Cited By ~ 4

Author(s):

Huolin Huang ◽

Zhonghao Sun ◽

Yaqing Cao ◽

Feiyu Li ◽

Feng Zhang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

IEEE Electron Device Letters ◽

10.1109/led.2014.2356720 ◽

2014 ◽

Vol 35 (11) ◽

pp. 1094-1096 ◽

Cited By ~ 28

Author(s):

Maojun Wang ◽

Dawei Yan ◽

Chuan Zhang ◽

Bing Xie ◽

Cheng P. Wen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2446504 ◽

2015 ◽

Vol 62 (8) ◽

pp. 2475-2480 ◽

Cited By ~ 19

Author(s):

Chuan Zhang ◽

Maojun Wang ◽

Bing Xie ◽

Cheng P. Wen ◽

Jinyan Wang ◽

...

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

physica status solidi (a) ◽

10.1002/pssa.201900762 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900762 ◽

Cited By ~ 2

Author(s):

Nicolò Zagni ◽

Alessandro Chini ◽

Francesco Maria Puglisi ◽

Paolo Pavan ◽

Giovanni Verzellesi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Carbon Doping ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Cited By ~ 8

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061001 ◽

Cited By ~ 7

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528613 ◽

2016 ◽

Author(s):

Shin-Yi Ho ◽

Chih-Hao Wang ◽

JianJang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Current Collapse

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.05.002 ◽

2010 ◽

Vol 54 (11) ◽

pp. 1430-1433 ◽

Cited By ~ 7

Author(s):

S. Arulkumaran ◽

G.I. Ng ◽

C.H. Lee ◽

Z.H. Liu ◽

K. Radhakrishnan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Rf Plasma ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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