Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

In this study, we evaluated the improved memristive switching characteristics of hydrogen silsesquioxane (HSQ) nanocomposites embedded with a single-walled carbon nanotube (SWCNT) random network. A low-temperature solution process was implemented using a flexible memristor device on a polyethylene naphthalate (PEN) substrate. The difference in the resistive switching (RS) behavior due to the presence of the SWCNT random network was analyzed by the current transport mechanism. Such a random network not only improves the RS operation but also facilitates a stable multilevel RS performance. The multiple-resistance states exhibited highly reliable nonvolatile retention properties over 104 s at room temperature (25 °C) and at a high temperature (85 °C), showing the possibility of an analog synaptic weight modulation. Consequently, the gradual weight potentiation/depression was realized through 3 × 102 synaptic stimulation pulses. These findings suggest that the embedded SWCNT random network can improve the synaptic weight modulation characteristics with high stability for an artificial synapse and hence can be used in future neuromorphic circuits.

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Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2011.03.020 ◽

2011 ◽

Vol 43 (7) ◽

pp. 1365-1370 ◽

Cited By ~ 6

Author(s):

Leihua Huang ◽

Eng Fong Chor ◽

Yihong Wu

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Random Network ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Effect Transistor

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Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽

10.1557/adv.2017.15 ◽

2017 ◽

Vol 2 (02) ◽

pp. 83-88

Author(s):

Huaping Li

Keyword(s):

Thin Film ◽

Thin Films ◽

Carbon Nanotube ◽

Large Scale ◽

Solution Process ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Schottky Type ◽

P Type ◽

Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

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