scholarly journals The Mechanisms Forming the Five–Floor Zonation of Quartz Veins: A Case Study in the Piaotang Tungsten–Tin Deposit, Southern China

Minerals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 883
Author(s):  
Xiangchong Liu ◽  
Wenlei Wang ◽  
Dehui Zhang

It is common among many vein–type tungsten deposits in southern China that the thickness of ore veins increases from <1 cm to >1 m with increasing depth. A five–floor zonation model for the vertical trend of vein morphology was proposed in the 1960s and has been widely applied for predicting ore bodies at deeper levels, but the causative mechanisms for such a zonation remain poorly understood. The Piaotang tungsten–tin deposit, one of the birthplaces of the five–floor zonation model, is chosen as a case study for deciphering the mechanisms forming its morphological zonation of quartz veins. The vertical trend of vein morphology and its link to the W–Sn mineralization in Piaotang was quantified by statistical distributions (Weibull distribution and power law distribution) of vein thickness and ore grade data (WO3 and Sn) from the levels of 676 m to 328 m. Then, the micro–scale growth history of quartz veins was reconstructed by scanning electron microscope–cathodoluminescence (SEM–CL) imaging and in situ trace element analysis. The Weibull modulus α of vein thickness increases with increasing depth, and the fractal dimensions of both vein thickness and ore grade data (WO3 and Sn) decrease with increasing depth. Their vertical changes indicate that the fractures that bear the thick veins were well connected, facilitating fluid focusing and mineralization in mechanically stronger host rocks. Three generations (Q1–Q3) of quartz were identified from CL images, and the CL intensity of quartz is possibly controlled by the concentrations of Al and temperature. From the relative abundance of the Q1–Q3 quartz at different levels, the vertical trend of vein morphology in Piaotang was initially produced during the hydrothermal event represented by Q1 and altered by later hydrothermal events represented by Q2 and Q3. Statistical distributions of vein thickness combined with SEM–CL imaging of quartz could be combined to evaluate the mineralization potential at deeper levels.

2017 ◽  
Vol 29 (4) ◽  
pp. 635-644 ◽  
Author(s):  
Louis J Cabri ◽  
Michelle Kelvin ◽  
Zhaoping Yang ◽  
Simon E Jackson ◽  
Okan Altun

2002 ◽  
Vol 12 (01n02) ◽  
pp. 61-69 ◽  
Author(s):  
S. Murao ◽  
S. Futatsugawa ◽  
K. Sera ◽  
V. B. Maglambayan

Tailings from an indigenous mining community were analyzed by PIXE to study the residual amount of gold and to check the relative increase in mercury content after the mineral dressing. The result showed that gold is sometimes left in the tailings at ore-grade concentration up to 30 ppm, and that relative mercury content is not increasing drastically. Since the tailings are trade target in the local community, it would be necessary for stakeholders to have a common and fair facility where they can assay gold content of the tailing at regular interval.


Author(s):  
John J. Donovan ◽  
Donald A. Snyder ◽  
Mark L. Rivers

We present a simple expression for the quantitative treatment of interference corrections in x-ray analysis. WDS electron probe analysis of standard reference materials illustrate the success of the technique.For the analytical line of wavelength λ of any element A which lies near or on any characteristic line of another element B, the observed x-ray counts at We use to denote x-ray counts excited by element i in matrix j (u=unknown; s=analytical standard; ŝ=interference standard) at the wavelength of the analytical line of A, λA (Fig. 1). Quantitative analysis of A requires an accurate estimate of These counts can be estimated from the ZAF calculated concentration of B in the unknown C,Bu measured counts at λA in an interference standard of known concentration of B (and containing no A), and ZAF correction parameters for the matrices of both the unknown and the interference standard at It can be shown that:


2019 ◽  
Vol 608 ◽  
pp. 247-262 ◽  
Author(s):  
MD Ramirez ◽  
JA Miller ◽  
E Parks ◽  
L Avens ◽  
LR Goshe ◽  
...  

Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.


Author(s):  
Daniel Araujo Goncalves ◽  
Tina McSweeney ◽  
Mirian Cristina dos Santos ◽  
Marco A. Utrera Martines ◽  
Luiz Francisco Malmonge ◽  
...  

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