scholarly journals Comparative Study of the Structure, Composition, and Electrocatalytic Performance of Hydrogen Evolution in MoSx~2+δ/Mo and MoSx~3+δ Films Obtained by Pulsed Laser Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 201 ◽  
Author(s):  
V. Fominski ◽  
M. Demin ◽  
D. Fominski ◽  
R. Romanov ◽  
A. Goikhman ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Hydrogen Evolution ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Morphological Properties ◽  
Electrochemical Characteristics ◽  
Laser Plume ◽  
Standard Configuration ◽  
Hydrogen Evolution Reactions ◽  
Ar Gas

Systematic and in-depth studies of the structure, composition, and efficiency of hydrogen evolution reactions (HERs) in MoSx films, obtained by means of on- and off-axis pulsed laser deposition (PLD) from a MoS2 target, have been performed. The use of on-axis PLD (a standard configuration of PLD) in a buffer of Ar gas, with an optimal pressure, has allowed for the formation of porous hybrid films that consist of Mo particles which support a thin MoSx~2+δ (δ of ~0.7) film. The HER performance of MoSx~2+δ/Mo films increases with increased loading and reaches the highest value at a loading of ~240 μg/cm2. For off-axis PLD, the substrate was located along the axis of expansion of the laser plume and the film was formed via the deposition of the atomic component of the plume, which was scattered in Ar molecules. This made it possible to obtain homogeneous MoSx~3+δ (δ~0.8–1.1) films. The HER performances of these films reached saturation at a loading value of ~163 μg/cm2. The MoSx~3+δ films possessed higher catalytic activities in terms of the turnover frequency of their HERs. However, to achieve the current density of 10 mA/cm2, the lowest over voltages were −162 mV and −150 mV for the films obtained by off- and on-axis PLD, respectively. Measurements of electrochemical characteristics indicated that the differences in the achievable HER performances of these films could be caused by their unique morphological properties.

scholarly journals Application of Pulsed Laser Deposition in the Preparation of a Promising MoSx/WSe2/C(В) Photocathode for Photo-Assisted Electrochemical Hydrogen Evolution

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1461
Author(s):  
Roman Romanov ◽  
Vyacheslav Fominski ◽  
Maxim Demin ◽  
Dmitry Fominski ◽  
Oxana Rubinkovskaya ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Hydrogen Evolution ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mutual Arrangement ◽  
Energy Bands ◽  
Laser Plume ◽  
Solar Water Splitting ◽  
Catalytically Active

We studied the possibility of using pulsed laser deposition (PLD) for the formation of a MoSx/WSe2 heterostructure on a dielectric substrate. The heterostructure can be employed for effective solar water splitting to produce hydrogen. The sapphire substrate with the conducting C(B) film (rear contact) helped increase the formation temperature of the WSe2 film to obtain the film consisting of 2H-WSe2 near-perfect nanocrystals. The WSe2 film was obtained by off-axis PLD in Ar gas. The laser plume from a WSe2 target was directed along the substrate surface. The preferential scattering of selenium on Ar molecules contributed to the effective saturation of the WSe2 film with chalcogen. Nano-structural WSe2 film were coated by reactive PLD with a nanofilm of catalytically active amorphous MoSx~4. It was established that the mutual arrangement of energy bands in the WSe2 and MoSx~4 films facilitated the separation of electrons and holes at the interface and electrons moved to the catalytically active MoSx~4. The current density during light-assisted hydrogen evolution was above ~3 mA/cm2 (at zero potential), whilst the onset potential reached 400 mV under irradiation with an intensity of 100 mW/cm2 in an acidic solution. Factors that may affect the HER performance of MoSx~4/WSe2/C(В) structure are discussed.

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
Vol 368-372 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
Morphological Properties ◽  
High Quality ◽  
Atomic Force ◽  
Different Temperatures ◽  
Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

Effects of deposition temperature on the structural and morphological properties of thin ZnO films fabricated by pulsed laser deposition

2008 ◽  
Vol 40 (2) ◽  
pp. 247-251 ◽  
Author(s):  
Rakhi Khandelwal ◽  
Amit Pratap Singh ◽  
Avinashi Kapoor ◽  
Sorin Grigorescu ◽  
Paola Miglietta ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Morphological Properties ◽  
Zno Films

Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition

2009 ◽  
Vol 41 (1) ◽  
pp. 89-93 ◽  
Author(s):  
Rakhi Khandelwal ◽  
Amit Pratap Singh ◽  
Avinashi Kapoor ◽  
Sorin Grigorescu ◽  
Paola Miglietta ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Morphological Properties

Structural and morphological properties of thin ZnO films grown by pulsed laser deposition

2008 ◽  
Vol 254 (17) ◽  
pp. 5475-5480 ◽  
Author(s):  
M. Suchea ◽  
S. Christoulakis ◽  
C. Tibeica ◽  
M. Katharakis ◽  
N. Kornilios ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Morphological Properties ◽  
Zno Films

Pulsed laser deposition of nanocomposite MoSex/Mo thin-film catalysts for hydrogen evolution reaction

2015 ◽  
Vol 592 ◽  
pp. 175-181 ◽  
Author(s):  
S.N. Grigoriev ◽  
V.Yu. Fominski ◽  
R.I. Romanov ◽  
M.A. Volosova ◽  
A.V. Shelyakov
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Catalysts

scholarly journals The Curious Case of Transient Plasma Generated by ns-laser Ablation of Ag in Ar Gas

2020 ◽  
Author(s):  
Stefan Irimiciuc ◽  
Sergii Chertopalov ◽  
Jiŕí Bulíř ◽  
Ladislav Fekete ◽  
Michal Novotný ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Complex Dynamics ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Deposition Process ◽  
Laser Deposition ◽  
Electrical Measurements ◽  
Electronic Distribution ◽  
Ar Gas

Abstract The continuous effort for transitioning pulsed laser deposition technique from an experimental tool into an industrial one is sustained by the use of complex technologies for in situ real-time monitoring of the deposition process. Floating Langmuir Probe (LP) and optical emission spectroscopy (OES) measurements were used for plasma monitoring during the pulsed laser deposition of Ag films under various Ar pressure conditions. The electrical measurements revealed a complex multi-structured distribution of the ions, which was strongly influenced by the increase of Ar pressure. The generation of highly energetic ions with the addition of Ar and the degree of Ar gas ionization was also explored. OES measurements confirmed the presence of highly ionized Ar species in the plasma. A peculiar effect was seen under pressures higher than 10 Pa, where the presence of high electronic charges lead to a perturbative behavior of plasma in the vicinity of the LP. The effect of these complex dynamics on the structure and quality of the deposited thin film was also investigated revealing a strong correlation between the electronic distribution in plasma and thin film thickness profile.

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