scholarly journals One-Step Chemical Vapor Deposition Synthesis of 3D N-doped Carbon Nanotube/N-doped Graphene Hybrid Material on Nickel Foam

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 700 ◽  
Author(s):  
Hua-Fei Li ◽  
Fan Wu ◽  
Chen Wang ◽  
Pei-Xin Zhang ◽  
Hai-Yan Hu ◽  
...  

3D hybrid nanostructures connecting 1D carbon nanotubes (CNTs) with 2D graphene have attracted more and more attentions due to their excellent chemical, physical and electrical properties. In this study, we firstly report a novel and facile one-step process using template-directed chemical vapor deposition (CVD) to fabricate highly nitrogen doped three-dimensional (3D) N-doped carbon nanotubes/N-doped graphene architecture (N-CNTs/N-graphene). We used nickel foam as substrate, melamine as a single source for both carbon and nitrogen, respectively. The morphology and microstructure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, isothermal analyses, X-ray photoelectron microscopy and Raman spectra. The obtained 3D N-CNTs/N-graphene exhibits high graphitization, a regular 3D structure and excellent nitrogen doping and good mesoporosity.

NANO ◽  
2012 ◽  
Vol 07 (06) ◽  
pp. 1250045 ◽  
Author(s):  
YUN SUN ◽  
RYO KITAURA ◽  
TAKUYA NAKAYAMA ◽  
YASUMITSU MIYATA ◽  
HISANORI SHINOHARA

The influences of synthesis parameters on the mean diameter and diameter distribution of as-grown single-wall carbon nanotubes (SWCNTs) with chemical vapor deposition (CVD) using the mist flow method have been investigated in detail with Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). We found that CVD reaction temperature and flow rate play an essential role in controlling the mean diameter and the quality of as-grown SWCNTs. Furthermore, we found that the carbon supply kinetics can be a dominant factor to determine the diameter of as-grown SWCNTs in the present mist flow method. Under a different combination of various parameters, the mean diameter of SWCNTs can be varied from 0.9 nm to 1.5 nm controllably.


2008 ◽  
Vol 14 (S2) ◽  
pp. 304-305
Author(s):  
M Ellis ◽  
T Jutarosaga ◽  
S Smith ◽  
Y Wei ◽  
S Seraphin

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


2011 ◽  
Vol 264-265 ◽  
pp. 837-842
Author(s):  
Jin Cheng ◽  
Xiao Ping Zou

In this study, we report the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition, which employs ferrocene as the catalyst precursors and ethanol as carbon source. We obtained massive deposits. The deposits were characterized by scanning electron microscopy, transmission electron microscopy, and visual laser Raman spectroscopy. We discussed the effects of synthesis temperature on the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition. Our results indicated that the synthesis temperature could affect not only on the graphitization degree, but also on the aligned growth of carbon nanotubes and the diameter of carbon nanotubes.


1999 ◽  
Vol 593 ◽  
Author(s):  
H. Cui ◽  
D. Palmer ◽  
O. Zhou ◽  
B. R. Stoner

ABSTRACTAligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.


2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee

AbstractThe growth behaviour of carbon nanotubes on the Fe-deposited Si (001) substrates by thermal chemical vapor deposition (CVD) has been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The Fe films are deposited for 20 s–20 min by pulse-laser deposition. SEM results show that the growth characteristics of carbon nanotubes strongly depend on the Fe film deposition time. TEM and SEM results show that the pretreatment annealing at 800 °C causes the continuous Fe films to be broken up into nanoparticles 8–50 nm across and discontinuous islands 100 nm– 1.1 μm in size. It is shown that the Fe nanoparticles are essentially required for the formation of aligned carbon nanotubes. SEM results show that the growth behaviors of carbon nanotubes are strongly dependent on the pretreatment atmospheres. In addition, for the Ar gas-pretreated sample, a carbonaceous layer is formed near the surface region. TEM results show direct evidence that a base growth mode is responsible for the growth of carbon nanotubes in the present work. Based on the microscopy results, the pretreatment condition dependence of the growth behaviors of carbon nanotubes is discussed.


2004 ◽  
Vol 858 ◽  
Author(s):  
H. Emrah Unalan ◽  
Manish Chhowalla

ABSTRACTSingle-walled carbon nanotubes (SWNTs) were synthesized both in powder form and on substrates using alcohol catalytic chemical vapor deposition method (ACCVD). A detailed parametric study was conducted. As-grown SWNTs were analyzed using transmission electron microscopy (HRTEM), field-emission scanning electron microscopy (FE-SEM) and Raman spectroscopy. Nucleation and growth of SWNTs occurred within seconds after introduction of the alcohol vapor. The results show that high quality SWNTs with a narrow diameter distribution without amorphous carbon can be grown using Co acetate catalyst doped with Fe acetate above 750°C. Defective nanotubes were observed at low (450°C) and high (950°C) temperatures with the optimum temperature being 850°C. In brief, our work has taken a step towards optimizing SWNTs growth conditions using ACCVD.


1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.


MRS Advances ◽  
2019 ◽  
Vol 4 (3-4) ◽  
pp. 211-216 ◽  
Author(s):  
Ryoko Furukawa ◽  
Yuno Yamamoto ◽  
Yoji Nabei ◽  
Shunji Bandow

AbstractEither boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ∼0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5∼12 at% and 1∼2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.


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