scholarly journals On-Chip Integrated Photonic Devices Based on Phase Change Materials

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 205
Author(s):  
Muhammad Shemyal Nisar ◽  
Xing Yang ◽  
Liangjun Lu ◽  
Jianping Chen ◽  
Linjie Zhou

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

2020 ◽  
Author(s):  
David Moss

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.


2020 ◽  
Author(s):  
David Moss

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.


2011 ◽  
Vol 324 ◽  
pp. 245-248
Author(s):  
Hassan Ghamlouche ◽  
Saleh Thaker Mahmoud ◽  
Naser Qamhieh ◽  
Ahmad I. Ayesh

The electrical and optical characteristics of indium doped Se2Sb2Te6phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.


2021 ◽  
Author(s):  
David Moss

With superior optical properties, high flexibility in engineering its material properties, andstrong capability for large-scale on-chip integration, graphene oxide (GO) is an attractivesolution for on-chip integration of two-dimensional (2D) materials to implement functionalintegrated photonic devices capable of new features. Over the past decade, integrated GOphotonics, representing an innovative merging of integrated photonic devices and thin GOfilms, has experienced significant development, leading to a surge in many applicationscovering almost every field of optical sciences. This paper reviews the recent advances in thisemerging field, providing an overview of the optical properties of GO as well as methods forthe on-chip integration of GO. The main achievements made in GO hybrid integratedphotonic devices for diverse applications are summarized. The open challenges as well as thepotential for future improvement are also discussed.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1272
Author(s):  
Zhihua Fan ◽  
Qinling Deng ◽  
Xiaoyu Ma ◽  
Shaolin Zhou

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.


2018 ◽  
Vol 5 (10) ◽  
pp. 1870063
Author(s):  
Ming Zhang ◽  
Mingbo Pu ◽  
Fei Zhang ◽  
Yinghui Guo ◽  
Qiong He ◽  
...  

2019 ◽  
Vol 383 (25) ◽  
pp. 3196-3199 ◽  
Author(s):  
Mandeep Singh ◽  
Sanjeev Kumar Raghuwanshi ◽  
T. Srinivas

2011 ◽  
Vol 239-242 ◽  
pp. 2769-2774
Author(s):  
Ning Li ◽  
Xiao Qin Zhu ◽  
Wen Chi ◽  
Jing Hua Chang ◽  
Hai Ming Gu ◽  
...  

Since phase change energy storage exchanger has two functions of heat exchange and heat energy storage, it is an important component of heat energy storage technique with phase change materials, its research has been thought highly by people, and great achievements have been obtained during the recent years. A review on its various structures and their research and development was made in this paper, and its further research and applications were also analyzed and forecasted.


2007 ◽  
Vol 449-451 ◽  
pp. 627-630 ◽  
Author(s):  
Yong-Goo Yoo ◽  
Dong-Seok Yang ◽  
Ho-Jun Ryu ◽  
Woo-Seok Cheong ◽  
Mun-Cheol Baek

2015 ◽  
Vol 10 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Qian Wang ◽  
Edward T. F. Rogers ◽  
Behrad Gholipour ◽  
Chih-Ming Wang ◽  
Guanghui Yuan ◽  
...  

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