Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

The electrical and optical characteristics of indium doped Se2Sb2Te6phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

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Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

MRS Proceedings ◽

10.1557/proc-369-401 ◽

1994 ◽

Vol 369 ◽

Author(s):

C. Zhang ◽

H. Deng ◽

J. Varon ◽

B. Abeles ◽

Y. Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Activation Energy ◽

Electrical Conductivity ◽

Optical Properties ◽

Optical Absorption ◽

Laser Deposition ◽

Electrical And Optical Properties ◽

Thermally Activated ◽

Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

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Laser-induced structural, electrical, and optical properties evolution of phase change Ge 2 Sb 2 Te 5 thin films

10.1117/12.825762 ◽

2008 ◽

Cited By ~ 1

Author(s):

Huajun Sun ◽

Lisong Hou ◽

Yiqun Wu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Phase Change ◽

Electrical And Optical Properties

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On-Chip Integrated Photonic Devices Based on Phase Change Materials

Photonics ◽

10.3390/photonics8060205 ◽

2021 ◽

Vol 8 (6) ◽

pp. 205

Author(s):

Muhammad Shemyal Nisar ◽

Xing Yang ◽

Liangjun Lu ◽

Jianping Chen ◽

Linjie Zhou

Keyword(s):

Optical Properties ◽

Phase Change ◽

Phase Change Materials ◽

Photonic Devices ◽

Memory Devices ◽

Electrical And Optical Properties ◽

Unique Type ◽

Fast Pace ◽

On Chip ◽

Made In

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

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Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

CrystEngComm ◽

10.1039/c3ce42024h ◽

2014 ◽

Vol 16 (5) ◽

pp. 757-762 ◽

Cited By ~ 38

Author(s):

Yimin Chen ◽

Guoxiang Wang ◽

Xiang Shen ◽

Tiefeng Xu ◽

R. P. Wang ◽

...

Keyword(s):

Thin Films ◽

Activation Energy ◽

Phase Change ◽

Melting Temperature ◽

Crystallization Temperature ◽

Phase Change Memory ◽

Data Retention ◽

Memory Applications ◽

Change Memory ◽

Lower Melting Temperature

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

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