scholarly journals Contribution of Polymers to Electronic Memory Devices and Applications

Polymers ◽  
2021 ◽  
Vol 13 (21) ◽  
pp. 3774
Author(s):  
Subin Lee ◽  
Somi Kim ◽  
Hocheon Yoo
Keyword(s):  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Charge Trap ◽  
Practical Applications ◽  
Strong Emphasis ◽  
Floating Gate Memory ◽  
Emerging Memory

Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.

Semiconductor Nanocrystal Floating-gate Memory Devices

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand
Keyword(s):  
Low Voltage ◽  
Ion Beam ◽  
Low Energy ◽  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Research Directions ◽  
Semiconductor Nanocrystal ◽  
Floating Gate Memory ◽  
Attractive Option

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.

Fabrication of Arrayed Si Nanowire-Based Nano-Floating Gate Memory Devices on Flexible Plastics

2012 ◽  
Vol 12 (1) ◽  
pp. 578-584
Author(s):  
Changjoon Yoon ◽  
Youngin Jeon ◽  
Junggwon Yun ◽  
Sangsig Kim
Keyword(s):  
Floating Gate ◽  
Memory Devices ◽  
Si Nanowire ◽  
Floating Gate Memory

Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides

2009 ◽  
Vol 9 (3) ◽  
pp. 1904-1908 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Junggwon Yun ◽  
Yong-Seo Koo ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Floating Gate ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
Floating Gate Memory ◽  
Titanium Nanoparticles

Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics

2008 ◽  
Vol 8 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Eun-Kyu Kim ◽  
Dong-Uk Lee ◽  
Seon-Pil Kim ◽  
Tae-Hee Lee ◽  
Hyun-Mo Koo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Nanoparticles ◽  
Floating Gate ◽  
Oxide Nanoparticles ◽  
Memory Devices ◽  
Floating Gate Memory

Flexible and transparent nanocrystal floating gate memory devices using silk protein

2014 ◽  
Vol 15 (8) ◽  
pp. 1767-1772 ◽  
Author(s):  
Susnata Bera ◽  
Suvra P. Mondal ◽  
Deboki Naskar ◽  
Subhas C. Kundu ◽  
Samit K. Ray
Keyword(s):  
Silk Protein ◽  
Floating Gate ◽  
Memory Devices ◽  
Floating Gate Memory

Memory Devices Based on the Nanoparticle Silicon Floating Gate Double-Barrier Structure

2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
Charge Carrier Mobility ◽  
Floating Gate ◽  
Memory Devices ◽  
Double Barrier ◽  
Floating Gate Memory ◽  
High Charge Carrier Mobility

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers

2007 ◽  
Author(s):  
S. Maikap ◽  
P. J. Tzeng ◽  
T. Y. Wang ◽  
H. Y. Lee ◽  
C. H. Lin ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Floating Gate ◽  
Memory Devices ◽  
Floating Gate Memory
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