Screw dislocations on $\left\{1\bar{2}12\right\}$ pyramidal planes induced by Vickers indentation in HVPE GaN

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

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Observation of dislocations in dynamically loaded Cu-SiO2

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143705 ◽

1986 ◽

Vol 44 ◽

pp. 424-425

Author(s):

D. S. Pritchard

Keyword(s):

Electron Microscope ◽

Strain Rate ◽

Single Crystal ◽

Transmission Electron Microscope ◽

Volume Fraction ◽

Screw Dislocations ◽

Spherical Inclusions ◽

Transmission Electron ◽

Crystal Dispersion ◽

Strain Rate Loading

The effect of varying the strain rate loading conditions in compression on a copper single crystal dispersion-hardened with SiO2 particles has been examined. These particles appear as small spherical inclusions in the copper lattice and have a volume fraction of 0.6%. The structure of representative crystals was examined prior to any testing on a transmission electron microscope (TEM) to determine the nature of the dislocations initially present in the tested crystals. Only a few scattered edge and screw dislocations were viewed in those specimens.

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Freeze-fracture TEM of the helical smectic A* phase

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010012179x ◽

1992 ◽

Vol 50 (1) ◽

pp. 278-279

Author(s):

K.J. Ihn ◽

R. Pindak ◽

J. A. N. Zasadzinski

Keyword(s):

Liquid Crystal ◽

Grain Boundary ◽

Grain Boundaries ◽

Freeze Fracture ◽

Smectic Phase ◽

Layer Spacing ◽

Screw Dislocations ◽

Smectic A ◽

Smectic Phases ◽

Discrete Amount

A new liquid crystal (called the smectic-A* phase) that combines cholesteric twist and smectic layering was a surprise as smectic phases preclude twist distortions. However, the twist grain boundary (TGB) model of Renn and Lubensky predicted a defect-mediated smectic phase that incorporates cholesteric twist by a lattice of screw dislocations. The TGB model for the liquid crystal analog of the Abrikosov phase of superconductors consists of regularly spaced grain boundaries of screw dislocations, parallel to each other within the grain boundary, but rotated by a fixed angle with respect to adjacent grain boundaries. The dislocations divide the layers into blocks which rotate by a discrete amount, Δθ, given by the ratio of the layer spacing, d, to the distance between grain boundaries, lb; Δθ ≈ d/lb (Fig. 1).

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