A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

2020 ◽  
Vol 59 (12) ◽  
pp. 125003
Author(s):  
Duong Dinh Phuoc ◽  
Le Thi Ngoc Bao ◽  
Le Thi Dieu Hien ◽  
Ho Khac Hieu ◽  
Dinh Nhu Thao
Keyword(s):  
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.


Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.


1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-335-C1-337 ◽  
Author(s):  
J. Carmeliet ◽  
J. C. Dehaes ◽  
W. Singer

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.


1994 ◽  
Vol 358 ◽  
Author(s):  
G. Gumbs

ABSTRACTA self-consistent many-body theory is developed to study the effect of temperature and electron density on the interband absorption coefficient and the frequency-dependent refractive index for an array of isolated quantum wires. The peaks in the absorption coefficient correspond to interband transitions resulting in the resonant absorption of light. The oscillations in the derivative spectrum are due to the quantization of the energy levels related to the in-plane confining potential for such reduced dimensional systems. There are appreciable changes in the absorption spectrum when the electron density or temperature is increased. One interband transition peak is suppressed in the high electron density limit and the thermal depopulation effect on the electron subbands can be easily seen when the temperature is high. We also find that the exciton coupling weakens the shoulder features in the absorption spectrum. This study is relevant to optical characterization of the confining potential and the areal density of electrons using photoreflectance. By using incident light with tunable frequencies in the interband excitation regime, contactless photoreflectance measurements may be carried out and the data compared with our calculations. By fitting the numerical results to the peak positions of the photoreflectance spectrum, the number of electrons in each wire may be extracted.


Author(s):  
Fei Gao ◽  
Jie-Yin Zhang ◽  
Jian-Huan Wang ◽  
Ming Ming ◽  
Tina Wang ◽  
...  

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
K. F. Karlsson ◽  
M.-A. Dupertuis ◽  
H. Weman ◽  
E. Kapon

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