Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam
2020 ◽
Vol 60
(1)
◽
pp. 016502
Masamichi Akazawa
◽
Ryo Kamoshida
◽
Shunta Murai
◽
Tetsu Kachi
◽
Akira Uedono
1990 ◽
Vol 73
(6)
◽
pp. 86-91
Tadahiro Ohmi
◽
Yoshio Ishihara
◽
Tadashi Shibata
◽
Akira Okita
1982 ◽
Vol 53
(3)
◽
pp. 1804-1806
◽
R. S. Bhattacharya
◽
P. P. Pronko
◽
S. C. Ling
1976 ◽
Vol 39
◽
pp. 279-286
B.C. Schwartz
◽
W.L. Bradley
2008 ◽
Vol 93
(10)
◽
pp. 101910
◽
N. Ioannou
◽
D. Skarlatos
◽
C. Tsamis
◽
C. A. Krontiras
◽
S. N. Georga
◽
...
2020 ◽
Vol 828
◽
pp. 154371
Xiang Wu
◽
Richu Wang
◽
Chaoqun Peng
◽
Xiaofeng Wang
2016 ◽
Vol 55
(2)
◽
pp. 021301
◽
Ayumi Onaka-Masada
◽
Takeshi Kadono
◽
Noritomo Mitsugi
◽
Kazunari Kurita
2019 ◽
Vol 58
(SC)
◽
pp. SCCB10
◽
Masamichi Akazawa
◽
Kei Uetake
1979 ◽
Vol 35
(2)
◽
pp. 178-180
◽
C. Lawrence Anderson
◽
H. L. Dunlap
1995 ◽
Vol 77
(12)
◽
pp. 6114-6120
◽
Tomas Pliska
◽
Dieter H. Jundt
◽
Daniel Fluck
◽
Peter Günter
◽
Daniel Rytz
◽
...
1994 ◽
Vol 30
(7)
◽
pp. 562-563
◽
T. Pliska
◽
P. Günter
◽
Ch. Buchal
◽
D. Fluck
◽
D.H. Jundt
◽
...