Low temperature annealing behavior of electroplated nickel

1976 ◽  
Vol 39 ◽  
pp. 279-286
Author(s):  
B.C. Schwartz ◽  
W.L. Bradley
Keyword(s):  
Low Temperature ◽  
Annealing Behavior ◽  
Low Temperature Annealing

scholarly journals Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

2020 ◽  
Vol 60 (1) ◽  
pp. 016502
Author(s):  
Masamichi Akazawa ◽  
Ryo Kamoshida ◽  
Shunta Murai ◽  
Tetsu Kachi ◽  
Akira Uedono
Keyword(s):  
Low Temperature ◽  
Positron Beam ◽  
Annealing Behavior ◽  
Low Temperature Annealing ◽  
Ion Implanted

Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers

2016 ◽  
Vol 55 (2) ◽  
pp. 021301 ◽  
Author(s):  
Ayumi Onaka-Masada ◽  
Takeshi Kadono ◽  
Noritomo Mitsugi ◽  
Kazunari Kurita
Keyword(s):  
Low Temperature ◽  
Deep Levels ◽  
Silicon Wafers ◽  
Annealing Behavior ◽  
Type Silicon ◽  
Low Temperature Annealing

Low‐temperature annealing behavior of GaAs implanted with Be

1979 ◽  
Vol 35 (2) ◽  
pp. 178-180 ◽  
Author(s):  
C. Lawrence Anderson ◽  
H. L. Dunlap
Keyword(s):  
Low Temperature ◽  
Annealing Behavior ◽  
Low Temperature Annealing

Annealing Behavior after Ion Shower Doping for the Fabrication of LTPS-TFTs

2007 ◽  
Vol 124-126 ◽  
pp. 231-234
Author(s):  
Beop Jong Jin ◽  
Joo Yeol Lee ◽  
Jae Sang Ro
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Ion Source ◽  
Gas Mixture ◽  
Annealing Behavior ◽  
Low Temperature Annealing ◽  
Uv Transmittance ◽  
Activation Annealing ◽  
Acceleration Voltage

Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimer-laser-annealed (ELA) poly-Si. The amount of as-implanted damage was observed to increase with acceleration voltage. The measured values of as-implanted damage using a UV-transmittance was found to correlate well with the ones calculated using TRIM-code simulation. After activation annealing the sheet resistance generally decreases as the acceleration voltage increases. It, however, increases as the acceleration voltage increases under the conditions of severe doping and low temperature annealing. Results of UV-transmission Spectroscopy and Hall measurements revealed that uncured damage seems to be responsible for the rise in sheet resistance.

Effect of electroactive nickel on the low-temperature annealing behavior of silicon

2010 ◽  
Vol 46 (10) ◽  
pp. 1045-1048
Author(s):  
E. A. Jafarova ◽  
E. S. Taptygov ◽  
Z. A. Iskenderzade
Keyword(s):  
Low Temperature ◽  
Annealing Behavior ◽  
Low Temperature Annealing

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

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