Observation of high carrier density, ohmic contact, and metallic conductivity down to 5 K in aluminum-contacted multilayer MoS2 flakes

Author(s):  
Yoshihiro Shimazu ◽  
Shotaro Ono ◽  
Takaaki Miyazawa ◽  
Kazuya Yamada
1993 ◽  
Vol 184 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
M. van der Burgt ◽  
A. Van Esch ◽  
F.M. Peeters ◽  
M. Van Hove ◽  
G. Borghs ◽  
...  

2019 ◽  
Vol 99 (12) ◽  
Author(s):  
Q. Niu ◽  
W. C. Yu ◽  
E. I. Paredes Aulestia ◽  
Y. J. Hu ◽  
Kwing To Lai ◽  
...  
Keyword(s):  

Solar RRL ◽  
2021 ◽  
Author(s):  
Jianjun Li ◽  
Jialiang Huang ◽  
Yanchan Huang ◽  
Hitoshi Tampo ◽  
Takeaki Sakurai ◽  
...  

Author(s):  
HIROKAZU TADA ◽  
HIROSHI TOUDA ◽  
MASAKI TAKADA ◽  
KAZUMI MATSUSHIGE

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.


Author(s):  
T. S. Sosnowski ◽  
T. B. Norris ◽  
H. H. Wang ◽  
P. Grenier ◽  
J. F. Whitaker ◽  
...  

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